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Showing items 1-20 of 20 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:15Z |
Energy Band Offsets at a Ga 2 O 3 (Gd 2 O 3)-GaAs Interface
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MINGHWEI HONG; Huang, DJ; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, Wei-Hsiu |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation
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Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
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Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing
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Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; Hong, M; Kwo, J; Lee, HY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:15Z |
Depth-profile study of the electronic structures at Ga 2 O 3 (Gd 2 O 3) and Gd 2 O 3-GaN interfaces by X-ray photoelectron spectroscopy
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Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; Lay, TS; Liao, YY; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:14Z |
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, Wei-Hsiu; Lee, WG; Kwo, J; Hong, M; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:21:13Z |
Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor
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Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:33Z |
Electrical characteristics of ultrathin Pt/Y 2 O 3/Si capacitor with rapid post-metallisation annealing
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Lay, TS;Liu, WD;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liu, WD; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:47Z |
Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si
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MINGHWEI HONG; others; Lay, TS; Sapjeta, BJ; Chu, SNG; Muller, DA; Opila, RL; Chabal, YJ; Kwo, J;Hong, M;Kortan, AR;Queeney, KL;Chabal, YJ;Opila, RL;Muller, DA;Chu, SNG;Sapjeta, BJ;Lay, TS;others; Kwo, J; Hong, M; Kortan, AR; Queeney, KL |
| 臺大學術典藏 |
2018-09-10T03:46:46Z |
CV and GV characterisation of Ga 2 O 3 (Gd 2 O 3)/GaN capacitor with low interface state density
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Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; MINGHWEI HONG; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Energy Offsets at Ga_2O_3 (Gd_2O_3)/GaAs and Ga_2O_3 (Gd_2O_3)/GaN interfaces
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Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, WH; Lay, TS; Hong, M; Kwo, J; Mannaerts, JP; Hung, WH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:45Z |
Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy
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Lay, TS;Huang, KH;Hung, Wei-Hsiu;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:44Z |
GaAs MOSFET-Materials Physics and Devices
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Hong, M;Kwo, J;Kortan, AR;Mannaerts, JP;Wang, YC;Lay, TS; Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wang, YC; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
CV and GV characterisation of Ga^ sub 2^ O^ sub 3^(Gd^ sup 2^ O^ sub 3^)/GaN capacitor with low interface state density
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Lay, TS;Liu, WD;Hong, M;Kwo, J;Mannaerts, JP; Lay, TS; Liu, WD; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:32Z |
New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si
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Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:39:36Z |
High nitrogen content InGaAsN/GaAs single quantum well for 1.55 mu m applications grown by molecular beam epitaxy
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Wang, JS; Kovsh, AR; Hsiao, RS; Chen, LP; Chen, JF; Lay, TS; Chi, JY |
| 臺大學術典藏 |
2001 |
Energy-band parameters at the GaAs-and GaN-Ga 2 O 3 (Gd 2 O 3) interfaces
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Hung, Wei-Hsiu; Huang, DJ; MINGHWEI HONG; Mannaerts, JP; Kwo, J; Hong, M; Lay, TS; Lay, TS;Hong, M;Kwo, J;Mannaerts, JP;Hung, Wei-Hsiu;Huang, DJ |
| 臺大學術典藏 |
1998 |
Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs
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Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG |
Showing items 1-20 of 20 (1 Page(s) Totally)
1
View [10|25|50] records per page
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