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| 國立交通大學 |
2019-04-02T05:58:50Z |
InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate
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Ke, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei |
| 國立交通大學 |
2018-01-24T07:38:19Z |
使用奈米結構改善氮化銦鎵發光元件之光電及結構特性研究
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李芳葦; 陳衛國; 柯文政; Lee, Fang-Wei; Chen, Wei-Kuo; Ke, Wen-Cheng |
| 國立交通大學 |
2017-04-21T06:55:56Z |
Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates
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Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo |
| 國立交通大學 |
2017-04-21T06:55:28Z |
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate
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Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon |
| 國立交通大學 |
2015-12-02T02:59:39Z |
Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN
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Ke, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping |
| 國立交通大學 |
2014-12-12T01:40:11Z |
高銦氮化銦鎵薄膜之成長與特性
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李芳葦; Lee, Fang-Wei; 陳衛國; Chen, Wei-Kuo |
| 國立交通大學 |
2014-12-08T15:35:55Z |
Optical properties associated with strain relaxations in thick InGaN epitaxial films
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Tsai, Wen-Che; Hsu, Chia-He; Fu, Shao-Fu; Lee, Fang-Wei; Chen, Chin-Yu; Chou, Wu-Ching; Chen, Wei-Kuo; Chang, Wen-Hao |
| 淡江大學 |
2008 |
建構共同基金投資組合模式之研究 - 以臺灣開放式股票型基金為例
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李方瑋; Lee, Fang-wei |
Showing items 1-8 of 8 (1 Page(s) Totally)
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