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Institution Date Title Author
國立交通大學 2014-12-08T15:02:55Z A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's Lee, RGH; Su, JS; Chung, SS
國立交通大學 2014-12-08T15:02:35Z An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's Lee, RGH; Wu, JP; Chung, SS

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