|
Taiwan Academic Institutional Repository >
Browse by Author
|
"lee t l"
Showing items 176-191 of 191 (8 Page(s) Totally) << < 1 2 3 4 5 6 7 8 View [10|25|50] records per page
國立臺灣大學 |
1994 |
Effects of Conduction Band Discontinuity and Two Dimentional Electron Gas on the DC Characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's
|
Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung |
臺大學術典藏 |
1994 |
Effects of Conduction Band Discontinuity and Two Dimentional Electron Gas on the DC Characteristics of InAlAs/InGaAs and InAlAs/InAlGaAs DHBT's
|
Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung |
臺大學術典藏 |
1994 |
Photoreflectance Study of Surface Fermi Level in Molecular Beam Epitaxial Grown InAlAs Heterostructures
|
Hwang, J. S.; Tyan, S. L.; Lee, M. L.; Chou, W. Y.; Weybume, D.; Hang, Z.; Lin, Hao-Hsiung; Lee, T. L.; Hwang, J. S.; Tyan, S. L.; Chou, W. Y.; Lee, M. L.; Weybume, D.; Hang, Z.; 林浩雄; Lee, T. L.; Chou, W. Y.; Weybume, D.; Hang, Z.; Lin, Hao-Hsiung; Lee, T. L. |
國立臺灣大學 |
1993-04 |
DC characteristics of In0.52Al0.48As/ In0.53(AxGa1-x)0.47As NPN double heterojunction bipolar transistors
|
Huang, C.-H.; Lee, T.-L.; Lin, H.-H. |
國立臺灣大學 |
1993 |
AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy
|
Lee, T. L.; Chu, W. D.; 林浩雄; Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung |
國立臺灣大學 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
|
Huang, Chang-Hsiu; Lee, T. L.; 林浩雄; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung |
國立臺灣大學 |
1993 |
Deep Level Analysis of MBE Grown InAlAs Strained Layers
|
Liu, J. S.; Lee, T. L.; 林浩雄; Wu, C. W.; Liu, J. S.; Lee, T. L.; Lin, Hao-Hsiung; Wu, C. W. |
國立臺灣大學 |
1993 |
On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver
|
Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Yang, T. F.; Tu, C. H.; Lee, T. L.; Lin, Hao-Hsiung; Tu, Y. K. |
國立臺灣大學 |
1993 |
On the High Frequency Properties of InGaAs Bipolar Transistors
|
Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; Lin, Hao-Hsiung |
臺大學術典藏 |
1993 |
AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy
|
Lee, T. L.; Chu, W. D.; Lin, Hao-Hsiung; Lee, T. L.; Chu, W. D.; 林浩雄; Lin, Hao-Hsiung |
臺大學術典藏 |
1993 |
DC Characteristics of In0.52Al0.48As/in0.53Ga0.47As/in0.53(AlxGa1-X) 0.47As Double Heterojunction Bipolar Transitors
|
Lin, Hao-Hsiung; 林浩雄; Lee, T. L.; Huang, Chang-Hsiu; Lee, T. L.; Lin, Hao-Hsiung; Huang, Chang-Hsiu |
臺大學術典藏 |
1993 |
On the Fabrication of In0.52Al0.48As/In0.53Ga0.47As Monolithic Photoreceiver
|
Yang, T. F.; Tu, C. H.; Lee, T. L.; Tu, Y. K.; Lin, Hao-Hsiung; Yang, T. F.; Tu, C. H.; Lee, T. L.; 林浩雄; Tu, Y. K.; Tu, C. H.; Lin, Hao-Hsiung |
臺大學術典藏 |
1993 |
On the High Frequency Properties of InGaAs Bipolar Transistors
|
Lee, T. L.; Huang, Chang-Hsiu; Lin, C. H.; Lin, Hao-Hsiung; Lin, C. H.; Lee, T. L.; Huang, Chang-Hsiu; 林浩雄; Lin, C. H.; Lin, Hao-Hsiung |
國立臺灣大學 |
1992 |
Preparation and Properties of Lattice-Matched InAlAs and InAlGaAs Epilayers on (100) InP
|
Lee, T. L.; 林浩雄; Lee, T. L.; Lin, Hao-Hsiung |
國立臺灣大學 |
1992 |
Clinical Trial of Bromocriptine Retard for Puerperal Alaction
|
Lee, C. N.; Lee, T. L.; Chen, D.; Lin, C. R.; Chen, C. A.; 謝長堯; Lee, C. N.; Lee, T. L.; Chen, D.; Lin, C. R.; Chen, C. A.; Hsieh, Chang-Yao |
臺大學術典藏 |
1992 |
Preparation and Properties of Lattice-Matched InAlAs and InAlGaAs Epilayers on (100) InP
|
Lee, T. L.; Lin, Hao-Hsiung; Lee, T. L.; 林浩雄; Lin, Hao-Hsiung |
Showing items 176-191 of 191 (8 Page(s) Totally) << < 1 2 3 4 5 6 7 8 View [10|25|50] records per page
|