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Institution Date Title Author
國立交通大學 2019-04-02T06:00:08Z InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping
國立交通大學 2014-12-08T15:36:33Z InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping
國立交通大學 2014-12-08T15:14:46Z Impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors Chan, Chih-Yuan; Lee, Ting-Chi; Hsu, Shawn S. H.; Chen, Leaf; Lin, Yu-Syuan
國立交通大學 2014-12-08T15:08:06Z Square-Gate AlGaN/GaN HEMTs With Improved Trap-Related Characteristics Lin, Yu-Syuan; Wu, Jia-Yi; Chan, Chih-Yuan; Hsu, Shawn S. H.; Huang, Chih-Fang; Lee, Ting-Chi

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