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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:08Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
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Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 國立交通大學 |
2014-12-08T15:36:33Z |
InAs-based heterostructure field-effect transistor using AlAs0.16Sb0.84 double barriers
|
Lin, Yue-Min; Lin, Kun-Ping; Lee, Ting-Chi; Li, Meng-Ying; Lee, Chien-Ping |
| 國立交通大學 |
2014-12-08T15:14:46Z |
Impacts of gate recess and passivation on AlGaN/GaN high electron mobility transistors
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Chan, Chih-Yuan; Lee, Ting-Chi; Hsu, Shawn S. H.; Chen, Leaf; Lin, Yu-Syuan |
| 國立交通大學 |
2014-12-08T15:08:06Z |
Square-Gate AlGaN/GaN HEMTs With Improved Trap-Related Characteristics
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Lin, Yu-Syuan; Wu, Jia-Yi; Chan, Chih-Yuan; Hsu, Shawn S. H.; Huang, Chih-Fang; Lee, Ting-Chi |
Showing items 1-4 of 4 (1 Page(s) Totally)
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