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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 國立臺灣大學 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
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Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1996-04 |
An unified GSMBE growth model for GaInAsP on InP and GaAs
|
Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Liu, Jin-Shung; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1996 |
Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy
|
Lee, Tsuen-Lin; Chu, Wen-Ding; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995-05 |
The incorporation behavior of As and P in GaInAsP(λ=1.3μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs
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Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 國立臺灣大學 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs
|
Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung |
| 臺大學術典藏 |
1995 |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
|
Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung; Lee, Tsuen-Lin; Liu, Jin-Shung; Lin, Hao-Hsiung |
Showing items 1-9 of 9 (1 Page(s) Totally)
1
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|
