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Showing items 36-60 of 228  (10 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T08:12:52Z Al2O3/Ga2O3 (Gd2O3) passivation on In0. 20Ga0. 80As/GaAs—structural intactness with high-temperature annealing Lee, YJ;Lee, CH;Tung, LT;Chiang, TH;Lai, TY;Kwo, J;Hsu, CH;Hong, M; Lee, YJ; Lee, CH; Tung, LT; Chiang, TH; Lai, TY; Kwo, J; Hsu, CH; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:52Z Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:52Z Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 Chang, P;Lee, WC;Huang, ML;Lee, YJ;Hong, M;Kwo, J; Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111) Lee, YJ;Lee, WC;Huang, ML;Wu, SY;Nieh, CW;Hong, M;Kwo, J;Hsu, CH; Lee, YJ; Lee, WC; Huang, ML; Wu, SY; Nieh, CW; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:12:51Z Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others
臺大學術典藏 2018-09-10T08:12:50Z Bulk and Surface Excitations in Gd2O3: Electron Energy Loss Spectroscopy Study Liou, SC;Chu, M-W;Chen, CH;Lee, YJ;Hong, M;Kwo, J; Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:19Z Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge Chu, LK;Lee, WC;Huang, ML;Chang, YH;Tung, LT;Chang, CC;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:19Z High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties Chang, WH;Lee, CH;Chang, P;Chang, YC;Lee, YJ;Kwo, J;Tsai, CC;Hong, JM;Hsu, C-H;Hong, M; Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:17Z GaN on Si with nm-thick single-crystal Sc 2 O 3 as a template using molecular beam epitaxy Lee, WC;Lee, YJ;Kwo, J;Hsu, CH;Lee, CH;Wu, SY;Ng, HM;Hong, M; Lee, WC; Lee, YJ; Kwo, J; Hsu, CH; Lee, CH; Wu, SY; Ng, HM; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:17Z Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium Lee, WC;Chin, BH;Chu, LK;Lin, TD;Lee, YJ;Tung, LT;Lee, CH;Hong, M;Kwo, J; Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:15Z Surface exciton polariton in monoclinic HfO2: an electron energy-loss spectroscopy study Liou, SC;Chu, MW;Lee, YJ;Hong, M;Kwo, J;Chen, CH; Liou, SC; Chu, MW; Lee, YJ; Hong, M; Kwo, J; Chen, CH; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:13Z Advances on III-V MOSFET for Science and Technology beyond Si CMOS Kwo, JR;Lin, TD;Huang, ML;Chang, P;Lee, YJ;Hong, M; Kwo, JR; Lin, TD; Huang, ML; Chang, P; Lee, YJ; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:34:11Z Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:24Z Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:24Z Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:22Z Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111) Liu, W-R; Li, Y-H; Hsieh, WF; Hsu, C-H; Lee, WC; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:22Z Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:21Z Nanometer thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection Nieh, CW; Lee, YJ; Lee, WC; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, CH; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:21Z Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:20Z High-quality nanothick single-crystal Y (2) O (3) films epitaxially grown on Si (111): Growth and structural characteristics Lee, YJ; Lee, WC; Nieh, CW; Yang, ZK; Kortan, AR; Hong, M; Kwo, J; Hsu, C-H; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:19Z Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:19Z Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111) Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; Hong, M; Ng, HM; Kwo, J; Hsu, CH; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:19Z Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor diodes based on high-k gate dielectrics You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG

Showing items 36-60 of 228  (10 Page(s) Totally)
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