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机构 日期 题名 作者
臺大學術典藏 2018-09-10T07:01:17Z Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-kappa Gate Dielectrics You, SL; Huang, CC; Wang, CJ; Ho, HC; Kwo, J; Lee, WC; Lee, KY; Wu, YD; Lee, YJ; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:17Z Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T07:01:14Z Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG; Chang, P; Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC
臺大學術典藏 2018-09-10T06:28:22Z Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:20Z Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; Hong, M; Kwo, J; Cui, S; Ma, TP; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:20Z Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:19Z Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; Hong, M; Kwo, J; MINGHWEI HONG; Hsu, YL; Lee, YJ; Chang, YH
臺大學術典藏 2018-09-10T06:28:19Z Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:19Z Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:18Z Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:16Z MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:16Z The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:14Z MBE and ALD grown High k Dielectrics Gate Stacks on GaN Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:12Z A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:12Z MBE grown high $κ$ dielectrics Ga 2 O 3 (Gd 2 O 3) on GaN Chang, Yao-Chung; Lee, YJ; Chiu, YN; Lin, Tsung-Da; Wu, SY; Chiu, Han-Chin; Kwo, J; Wang, Yeong-Her; Hong, Minghwei; MINGHWEI HONG
臺大學術典藏 2018-09-10T06:28:11Z InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:56:16Z Structure of HfO2 films epitaxially grown on GaAs (001) Hsu, C-H; Chang, P; Lee, WC; Yang, ZK; Lee, YJ; Hong, M; Kwo, J; Huang, CM; Lee, HY; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:56:15Z Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics Lee, KY; Lee, WC; Lee, YJ; Huang, ML; Chang, CH; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:56:15Z Structural and electrical characteristics of Ga2O3 (Gd2O3)/GaAs under high temperature annealing Chen, CP; Lee, YJ; Chang, YC; Yang, ZK; Hong, M; Kwo, J; Lee, HY; Lay, TS; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:16Z Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al̃ 2Õ 3 Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; Hong, M; Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:15Z MBE-grown high $κ$ gate dielectrics of HfO 2 and (Hf-Al) O 2 for Si and III-V semiconductors nano-electronics Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:15Z Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; Hong, M; MINGHWEI HONG
臺大學術典藏 2018-09-10T05:21:10Z Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG
臺大學術典藏 2018-09-10T04:51:58Z Fundamental Study and Oxide Reliability of the MBE-Grown Ga 2- x Gd x O 3 Dielectric Oxide for Compound Semiconductor MOSFETs Kwo, J; Hong, M; Mannaerts, JP; Lee, YJ; Wu, YD; Lee, WG; Milkap, S; Yang, B; Gustaffson, T; MINGHWEI HONG
國家衛生研究院 2018-05-01 Association between influenza vaccination and the reduced risk of acute kidney injury among older people: A nested case-control study Shih, CH;Lee, YJ;Chao, PW;Kuo, SC;Ou, SM;Huang, HM;Chen, YT

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