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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:43:48Z |
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
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Wu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
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Chiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:39:40Z |
TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:37:21Z |
Effects of O-2- and N-2-plasma treatments on copper surface
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Chiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:29Z |
TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
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Chiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS |
Showing items 1-5 of 5 (1 Page(s) Totally)
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