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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
| 國立成功大學 |
2004-09 |
Improved step-graded-channel heterostructure field-effect transistor
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Yu, Shu-Jenn; Hsu, Wei-Chou; Li, Yih-Juan; Chen, Yeong-Jia |
| 國立成功大學 |
2004-07-09 |
具有漸變式砷化銦鎵通道異質結構場效電晶體之研製
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李亦顓; Li, Yih-Juan |
| 國立成功大學 |
2003-05 |
Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, Yen-Wei; Shieh, Hir-Ming |
| 國立成功大學 |
2003-03 |
Temperature-dependent characteristics of an Al0.2Ga0.8As/ln(0.22)Ga(0.78)As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer
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Li, Yih-Juan; Hsu, Wei-Chou; Wang, Sheng-Yung |
| 國立成功大學 |
2002-02 |
High breakdown characteristic 6-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT
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Chen, Yen-Wei; Hsu, Wei-Chou; Shieh, Her-Ming; Chen, Yeong-Jia; Lin, Yu-Shyan; Li, Yih-Juan; Wang, Tzong-Bin |
| 國立成功大學 |
2001-01-15 |
An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled delta-doping InP channel
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Chen, Yeong-Jia; Chen, Yen-Wei; Lin, Yu-Shyan; Yeh, Chia-Yen; Li, Yih-Juan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-07 |
Investigation of a graded channel InGaAs/GaAs heterostructure transistor
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Li, Yih-Juan; Su, Jan-Shing; Lin, Yu-Shyan; Hsu, Wei-Chou |
Showing items 1-8 of 8 (1 Page(s) Totally)
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