臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
臺大學術典藏	2020-05-04T08:06:34Z	Data compression and query for large scale sensor data on COTS DBMS	TEI-WEI KUO; Liang, M.-S.; Shih, C.-S.; Kuo, T.-W.; Luoh, R.-S.; Kuo, C.-W.; Suei, P.-L.;Kuo, C.-W.;Luoh, R.-S.;Kuo, T.-W.;Shih, C.-S.;Liang, M.-S.; Suei, P.-L.
臺大學術典藏	2020-01-13T08:22:41Z	Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors	Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; Liu, C.W.; MING-HAN LIAO
臺大學術典藏	2020-01-13T08:22:40Z	Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor	Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO
臺大學術典藏	2020-01-13T08:22:40Z	2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions	Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; MING-HAN LIAO
臺大學術典藏	2020-01-06T03:08:10Z	Absorption of ethanol into water and glycerol/water solution in a rotating packed bed	Chiang, C.-Y.; Chen, Y.-S.; Liang, M.-S.; Lin, F.-Y.; Tai, C.Y.-D.; Liu, H.-S.; HWAI-SHEN LIU
臺大學術典藏	2020-01-06T03:08:08Z	Biodegradation of n-alkanes at high concentration and correlation to the accumulation of H + ions in Rhodococcus erythropolis NTU-1	Liu, C.-W.; Liang, M.-S.; Chen, Y.-C.; Sayavedra-Soto, L.A.; Liu, H.-S.; HWAI-SHEN LIU
臺大學術典藏	2019-03-11T08:01:04Z	The dependence of the performance of strained NMOSFETs on channel width	Liang, M.S.;Lee, T.L.;Liu, C.W.;Lee, J.Y.-M.;Wu, J.;Chen, C.H.;Yeh, L.;Liao, M.H.; Yeh, L.; Liao, M.H.; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; Liang, M.S.
臺大學術典藏	2019-03-11T08:01:01Z	Superior n-MOSFET performance by optimal stress design	Liang, M.-S.;Liu, C.W.;Lee, T.-L.;Yeh, L.;Liao, M.H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liu, C.W.; Liang, M.-S.
臺大學術典藏	2018-09-10T08:14:39Z	Data compression and query for large scale sensor data on COTS DBMS	Shih, C.-S.; Liang, M.-S.; CHI-SHENG SHIH; Suei, P.-L.;Kuo, C.-W.;Luoh, R.-S.;Kuo, T.-W.;Shih, C.-S.;Liang, M.-S.; Suei, P.-L.; Kuo, C.-W.; Luoh, R.-S.; Kuo, T.-W.
臺大學術典藏	2018-09-10T07:37:16Z	The dependence of the performance of strained NMOSFETs on channel width	Yeh, L.;Liao, M.H.;Chen, C.H.;Wu, J.;Lee, J.Y.-M.;Liu, C.W.;Lee, T.L.;Liang, M.S.; Yeh, L.; Liao, M.H.; Chen, C.H.; Wu, J.; Lee, J.Y.-M.; Liu, C.W.; Lee, T.L.; Liang, M.S.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T07:04:11Z	Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors	Cheng, T.-H.; Liao, M.H.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; Liu, C.W.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T07:04:10Z	Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor	Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; Liang, M.-S.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T07:04:08Z	Superior n-MOSFET performance by optimal stress design	Liao, M.H.; Yeh, L.; Lee, T.-L.; Liu, C.W.; Liang, M.-S.; CHEE-WEE LIU
臺大學術典藏	2018-09-10T06:31:20Z	Superior n-MOSFET performance by optimal stress design	CHEE-WEE LIU; Liang, M.-S.; Yeh, L.; Lee, T.-L.; Liu, C.W.; Liao, M.H.; Yang, Y.-J.
國立交通大學	2017-04-21T06:48:24Z	High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Chen, W. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立交通大學	2017-04-21T06:48:24Z	Relaxation-free strained SiGe with super anneal for 32nm high performance PMOS and beyond	Yu, Ming H.; Li, J. H.; Lin, H. H.; Chen, C. H.; Ku, K. C.; Nieh, C. F.; Hisa, H.; Sheu, Y. M.; Tsai, C. W.; Wang, Y. L.; Chu, H. Y.; Cheng, H. C.; Lee, T. L.; Chen, S. C.; Liang, M. S.
國立交通大學	2014-12-08T15:44:11Z	Mechanical properties and fracture mechanism of porous SiOCH low-k dielectrics	Chang, H. L.; Kuo, C. T.; Liang, M. S.
國立交通大學	2014-12-08T15:15:52Z	HfSiON n-MOSFETs using low-work function HfSi chi gate	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立交通大學	2014-12-08T15:14:22Z	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. -F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立交通大學	2014-12-08T15:08:20Z	The Dependence of the Performance of Strained NMOSFETs on Channel Width	Yeh, Lingyen; Liao, Ming Han; Chen, Chun Heng; Wu, Jun; Lee, Joseph Ya-Min; Liu, Chee Wee; Lee, T. L.; Liang, M. S.
國立交通大學	2014-12-08T15:06:33Z	Oxygen vacancy estimation of high k metal gate using thermal dynamic model	Chang, H. L.; Liang, M. S.
國立成功大學	2009-08	The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs	Cheng, C. Y.; Fang, Yean-Kuen; Liao, J. C.; Wang, T. J.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-11-10	The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks	Liao, Jia-Ching; Fang, Yean-Kuen; Chen, C. H.; Hou, Y. T.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-09-01	Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks	Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-05	Investigation of bulk traps enhanced gate-induced leakage current in Hf-based MOSFETs	Liao, Jia-Ching; Fang, Yean-Kuen; Hou, Y. T.; Tseng, W. H.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2008-04-30	Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique	Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Wu, W. H.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S.
國立成功大學	2007-04	High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立成功大學	2006-09	HfSiON n-MOSFETs using low-work function HfSi chi gate	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立成功大學	2006-06	HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide	Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S.
國立成功大學	2005-10	Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application	Yang, Chih-Wei; Liang, M. S.; Fang, Yean-Kuen; Hou, T. H.; Yao, Liang-Gi; Chen, S. C.; Chen, S. F.; Lin, C. S.; Lin, C. Y.; Wang, W. D.; CHou, T. H.; Lin, P. J.
國立臺灣科技大學	2004	Growth of (Ti, Zr)N films on Si by DC reactive sputtering of TiZr in N2/Ar gas mixtures - Effect of flow ratio	Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H.
國立臺灣科技大學	2004	Diffusion of copper in titanium zirconium nitride thin films	Kuo, Y.L.;Lee, H.H.;Lee, C.;Lin, J.C.;Shue, S.L.;Liang, M.S.;Daniels, B.J.
國立成功大學	2003-10-16	Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift	Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S.
國立成功大學	2003-07-14	Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric	Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S.
國立成功大學	2003-04-17	HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application	Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S.
國立成功大學	2003-04	Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide	Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S.
國立成功大學	2003-01	Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment	Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S.
國立臺灣科技大學	2003	Characteristics of DC reactively sputtered (Ti,Zr)N thin films as diffusion barriers for Cu metallization	Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H.

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