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Showing items 26-38 of 38 (2 Page(s) Totally)
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| 國立成功大學 |
2008-04-30 |
Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique
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Liao, J. C.; Fang, Yean-Kuen; Hou, Y. T.; Wu, W. H.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. |
| 國立成功大學 |
2007-04 |
High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, S. J.; Wang, X. P.; Li, M. F.; Zhu, C.; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-09 |
HfSiON n-MOSFETs using low-work function HfSi chi gate
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2006-06 |
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
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Wu, C. H.; Hung, B. F.; Chin, Albert; Wang, Shui-Jinn; Yen, F. Y.; Hou, Y. T.; Jin, Y.; Tao, H. J.; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2005-10 |
Reliability studies of Hf-doped and NH3-nitrided gate dielectric for advanced CMOS application
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Yang, Chih-Wei; Liang, M. S.; Fang, Yean-Kuen; Hou, T. H.; Yao, Liang-Gi; Chen, S. C.; Chen, S. F.; Lin, C. S.; Lin, C. Y.; Wang, W. D.; CHou, T. H.; Lin, P. J. |
| 國立臺灣科技大學 |
2004 |
Growth of (Ti, Zr)N films on Si by DC reactive sputtering of TiZr in N2/Ar gas mixtures - Effect of flow ratio
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Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H. |
| 國立臺灣科技大學 |
2004 |
Diffusion of copper in titanium zirconium nitride thin films
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Kuo, Y.L.;Lee, H.H.;Lee, C.;Lin, J.C.;Shue, S.L.;Liang, M.S.;Daniels, B.J. |
| 國立成功大學 |
2003-10-16 |
Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift
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Yang, Chih-Wei; Fang, Yean-Kuen; Lin, C. S.; Tsair, Y. S.; Chen, Shi-Ming; Wang, W. D.; Wang, M. F.; Cheng, Juing-Yi; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-07-14 |
Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Chen, C. H.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-04-17 |
HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, S. F.; Wang, M. F.; Hou, T. H.; Lin, Y. M.; Yao, Liang-Gi; Chen, S. C.; Liang, M. S. |
| 國立成功大學 |
2003-04 |
Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
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Yang, Chih-Wei; Fang, Yean-Kuen; Ting, S. F.; Chen, C. H.; Wang, W. D.; Lin, T. Y.; Wang, M. F.; Yu, M. C.; Chen, C. L.; Yao, Liang-Gi; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立成功大學 |
2003-01 |
Improvement of short-channel characteristics of a 0.1-mu m PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment
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Yang, Chih-Wei; Fang, Yean-Kuen; Chen, C. H.; Wang, W. D.; Ting, S. F.; Cheng, J. Y.; Wang, M. F.; Chen, C. L.; Yao, Liang-Gi; Lee, T. L.; Chen, S. C.; Yu, C. H.; Liang, M. S. |
| 國立臺灣科技大學 |
2003 |
Characteristics of DC reactively sputtered (Ti,Zr)N thin films as diffusion barriers for Cu metallization
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Kuo, Y.L.;Lee, C.;Lin, J.C.;Peng, C.H.;Chen, L.C.;Hsieh, C.H.;Shue, S.L.;Liang, M.S.;Daniels, B.J.;Huang, C.L.;Lai, C.H. |
Showing items 26-38 of 38 (2 Page(s) Totally)
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