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Showing items 1-7 of 7 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
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Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC |
| 國立交通大學 |
2014-12-08T15:26:10Z |
Optimized noise and consistent RF model for 0.18 mu m MOSFETs
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Huang, CH; Li, HY; Chin, A; Liang, V; Chien, SC |
| 國立交通大學 |
2014-12-08T15:26:09Z |
Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
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Chan, KT; Chin, A; McAlister, SP; Chang, CY; Tseng, C; Liang, V; Chen, JK; Chien, SC; Duh, DS; Lin, WJ |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Impact of hot carrier stress on RF power characteristics of MOSFETs
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Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:48Z |
Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
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Chen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V |
Showing items 1-7 of 7 (1 Page(s) Totally)
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