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Showing items 1-11 of 11 (1 Page(s) Totally)
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| 國立臺灣大學 |
2007 |
樹脂灌注成型法對於表面螺紋印現象及拉伸疲勞性質之影響
|
廖進益; Liao, Chin-I |
| 國立成功大學 |
2006-04 |
Novel direct MOCVD growth of InxGa1-xAs and InP metamorphic layers on GaAs substrates
|
Yarn, Kao-Feng; Liao, Chin-I; Lin, C. L. |
| 國立成功大學 |
2006-02 |
Enhanced characteristics in gate-recessed and sidewall-recessed AlGaAs/InGaAs PHEMTs by citric-based selective wet etching
|
Yarn, Kao-Feng; Liao, Chin-I |
| 國立成功大學 |
2005-10 |
High gate breakdown voltage and low leakage current using selective citric etcrant on the sidewall recessed AlGaAs/InGaAs PHEMTs
|
Yarn, K. F.; Liao, Chin-I; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
2005-08 |
Effects of gate sidewall recess on Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs by citric-based selective etchant
|
Yarn, Kao-Feng; Liao, Chin-I; Wang, Yeong-Her; Houng, Mau-Phon |
| 國立成功大學 |
2004-09-28 |
Highly selective etching of GaAs on Al0.2Ga0.8As using citric acid/H2O2/H2O etching system
|
Liao, Chin I.; Houng, Mau-Phon; Wang, Yeong-Her |
| 國立成功大學 |
2004-07-16 |
以有機金屬化學氣相沉積法成長高品質變形緩衝層以及選擇性蝕刻製程技術應用於高效能高速場效電晶體之研究
|
廖晉毅; Liao, Chin-I |
| 國立成功大學 |
2004-07-16 |
以有機金屬化學氣相沉積法成長高品質變形緩衝層以及選擇性蝕刻製程技術應用於高效能高速場效電晶體之研究
|
廖晉毅; Liao, Chin-I |
| 國立成功大學 |
2003-08 |
Direct growth of high-quality InP layers on GaAs substrates at low temperature by metalorganic vapor phase epitaxy
|
Liao, Chin-I; Yarn, Kao-Feng; Lin, Chien-Lien; Lin, Yu-Lu; Wang, Yeong-Her |
| 國立成功大學 |
2003-06-15 |
Very high selective etching of GaAs/Al0.2Ga0.8As for gate recess process to pseudomorphic high electron mobility transistors (PHEMT) applications using citric buffer solution
|
Liao, Chin-I; Sze, Po-Wen; Houng, Mau-Phon; Wang, Yeong-Her |
| 國立成功大學 |
2001-10-15 |
Direct growth of high-quality InxGa1-xAs strained layers on misoriented GaAs substrates grown by metalorganic chemical vapor deposition
|
Liao, Chin-I.; Yarn, Kao-Feng; Lin, Chien-Lien; Wang, Yeong-Her |
Showing items 1-11 of 11 (1 Page(s) Totally)
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