臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
國家衛生研究院	2021-09-27	Hyaluronic acid-glycine-cholesterol conjugate-based nanoemulsion as a potent vaccine adjuvant for T cell-mediated immunity	Lin, CA;Ho, HM;Venkatesan, P;Huang, CY;Cheng, YJ;Lin, YH;Lin, HY;Chen, TY;Huang, MH;Lai, PS
中山醫學大學	2021	The M1/M2 spectrum and plasticity of malignant pleural effusion-macrophage in advanced lung cancer	Wu, MF; Lin, CA; Yuan, TH; Yeh, HY; Su, SF; Guo, CL; Chang, GC; Li, KC; Ho, CC; Chen, HW
國立交通大學	2019-04-02T05:59:48Z	Necessary and sufficient conditions for existence of decoupling controllers	Lin, CA
國立交通大學	2019-04-02T05:59:22Z	STATISTICAL LINEARIZATION FOR MULTIINPUT MULTIOUTPUT NONLINEARITIES	LIN, CA; CHENG, VHL
臺大學術典藏	2018-09-10T09:20:51Z	$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As	Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:51Z	InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics	Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:50Z	Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition	Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:50Z	Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition	Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:50Z	In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As	Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:50Z	In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces	Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T09:20:50Z	$\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces	Kwo, J; MINGHWEI HONG; Hong, M; Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W
臺大學術典藏	2018-09-10T08:40:13Z	Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs	Chang, YH;Huang, ML;Chang, P;Lin, CA;Chu, YJ;Chen, BR;Hsu, CL;Kwo, J;Pi, TW;Hong, M; Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:13Z	Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]	Lin, CA;Chiu, HC;Chiang, TH;Lin, TD;Chang, YH;Chang, WH;Chang, YC;Wang, W-E;Dekoster, J;Hoffmann, TY;others; Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:11Z	Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As	Lin, CA;Chiu, HC;Chiang, TH;Chang, YC;Lin, TD;Kwo, J;Wang, W-E;Dekoster, J;Heyns, M;Hong, M; Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:40:11Z	Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric	Chang, WH;Chiang, TH;Wu, YD;Hong, M;Lin, CA;Kwo, J; Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:53Z	Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As	Wu, YD;Lin, TD;Chiang, TH;Chang, YC;Chiu, HC;Lee, YJ;Hong, M;Lin, CA;Kwo, J; Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations	Chu, RL;Lin, TD;Chu, LK;Huang, ML;Chang, CC;Hong, M;Lin, CA;Kwo, J; Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:52Z	Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-$κ$ dielectrics on Ge without interfacial layers	Chu, LK;Chu, RL;Lin, TD;Lee, WC;Lin, CA;Huang, ML;Lee, YJ;Kwo, J;Hong, M; Chu, LK; Chu, RL; Lin, TD; Lee, WC; Lin, CA; Huang, ML; Lee, YJ; Kwo, J; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:51Z	Nano-electronics of high k dielectrics on exotic semiconductors for science and technology beyond Si CMOS	Lee, WC; Chang, P; Lee, YJ; Huang, ML; Lin, TD; Chu, LK; Chang, YC; Chiu, HC; Chang, YH; Lin, CA; others; MINGHWEI HONG; Lee, WC;Chang, P;Lee, YJ;Huang, ML;Lin, TD;Chu, LK;Chang, YC;Chiu, HC;Chang, YH;Lin, CA;others
臺大學術典藏	2018-09-10T08:12:50Z	Achieving high-performance Ge MOS devices using high-к gate dielectrics Ga 2 O 3 (Gd 2 O 3) of sub-nm EOT	Chu, LK;Chu, RL;Lin, CA;Lin, TD;Chiang, TH;Kwo, J;Hong, Mingyi; Chu, LK; Chu, RL; Lin, CA; Lin, TD; Chiang, TH; Kwo, J; Hong, Mingyi; MINGHWEI HONG
臺大學術典藏	2018-09-10T08:12:49Z	InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric	Lee, WC;Lin, TD;Chu, LK;Chang, P;Chang, YC;Chu, RL;Chiu, HC;Lin, CA;Chang, WH;Chiang, TH;others; Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:17Z	Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics	Lin, CA;Lin, TD;Chiang, TH;Chiu, HC;Chang, P;Hong, M;Kwo, J; Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:13Z	Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics	Lin, TD;Chiu, HC;Chang, P;Chang, YH;Lin, CA;Chang, WH;Kwo, J;Tsai, W;Hong, M; Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:11Z	Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As	Lin, TD;Wu, YD;Chang, YC;Chiang, TH;Chuang, CY;Lin, CA;Chang, WH;Chiu, HC;Tsai, W;Kwo, J;others; Lin, TD; Wu, YD; Chang, YC; Chiang, TH; Chuang, CY; Lin, CA; Chang, WH; Chiu, HC; Tsai, W; Kwo, J; others; MINGHWEI HONG
臺大學術典藏	2018-09-10T07:34:11Z	Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS	Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG

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