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| 國立交通大學 |
2019-04-02T06:00:28Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:59:51Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO3 Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2019-04-02T05:57:53Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:40Z |
Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
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Tsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2017-04-21T06:56:16Z |
3D resistive RAM cell design for high-density storage class memory-a review
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Hudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung |
| 東海大學 |
2017 |
營運資金及資本支出對企業經營績效之影響-以臺灣冷凍食品為例
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林禎禧; LIN,CHEN-HSI |
| 國立交通大學 |
2015-07-21T08:31:06Z |
3D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating Current
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Hsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung |
| 國立交通大學 |
2015-07-21T08:29:39Z |
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
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Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:32Z |
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
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Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:48:37Z |
Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO(3)-Based Memory Films
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Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
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Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:29:52Z |
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
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Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi |
| 國立交通大學 |
2014-12-08T15:29:05Z |
Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer
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Wu, Ming-Chi; Lin, Meng-Han; Yeh, Yu-Ting; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:28:51Z |
Low-Power and Highly Reliable Multilevel Operation in ZrO(2) 1T1R RRAM
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Wu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:40Z |
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO2/Pt nonvolatile memory with 1T1R architecture
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Wu, Ming-Chi; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:23:20Z |
Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory
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Huang, Jiun-Jia; Hou, Tuo-Hung; Hsu, Chung-Wei; Tseng, Yi-Ming; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi |
| 國立交通大學 |
2014-12-08T15:15:52Z |
Resistive switching mechanisms of V-doped SrZrO3 memory films
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Lin, Chun-Chieh; Tu, Bing-Chung; Lin, Chao-Cheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:13:00Z |
Voltage-polarity-independent and high-speed resistive switching properties of v-doped SrZrO3 thin films
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Lin, Chun-Chieh; Lin, Chih-Yang; Lin, Meng-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:11:49Z |
High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed SrZrO(3) Memory Devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Yi-Han; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:10:51Z |
Improvement of resistive switching characteristics in SrZrO3 thin films with embedded Cr layer
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Lin, Chih-Yang; Lin, Meng-Han; Wu, Ming-Chi; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:33Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:16Z |
Resistive switching properties of SrZrO(3)-based memory films
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Lin, Chun-Chieh; Lin, Chao-Cheng; Tu, Bing-Chung; Yu, Jung-Sheng; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:05:13Z |
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
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Lin, Chun-Chieh; Yu, Jung-Sheng; Lin, Chih-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:05:08Z |
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
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Lin, Chih-Yang; Lin, Chun-Chieh; Huang, Chun-Hsing; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
Showing items 1-25 of 30 (2 Page(s) Totally)
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