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| 臺大學術典藏 |
2018-09-10T04:49:37Z |
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
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Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.; Cheng, Y.-C.; Lin, E.-C.; Wu, C.-M.; Yang, C.C.; Yang, J.-R.; Rosenauer, A.; Ma, K.-J.; Shi, S.-C.; Chen, L.C.; Pan, C.-C.; Chyi, J.-I.Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer,; reas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG; Yang, Jer-Ren |
| 臺大學術典藏 |
2018-09-10T04:29:29Z |
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
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Cheng, Yung-Chen; Lin, En-Chiang; Feng, Shih-Wei; Wang, Hsiang-Chen; Yang, C.C.; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L.C.; Pan, Chang-Chi; Chyi, Jen-Inn; CHIH-CHUNG YANG |
| 國立臺灣大學 |
2004 |
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
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Cheng, Yung-Chen; Lin, En-Chiang; Chen, Meng-Kuo; Wu, Cheng-Ming; Yang, C.C.; Ma, Kung-Jen |
| 國立臺灣大學 |
2004 |
Nanostructures and Carrier Localization Behaviors of Green-luminescence InGaN/GaN Quantum-well Structures of Various Silicon-doping Conditions
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Cheng, Yung-Chen; Lin, En-Chiang; Wu, Cheng-Ming; Yang, C. C.; Yang, Jer-Ren; Rosenauer, Andreas; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L. C.; Pan, Chang-Chi; Chyi, Jen-Inn |
| 國立臺灣大學 |
2003-12 |
Quantum dot structures and their optical properties of a high-indium InGaN film
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Feng, Shih-Wei; Lin, En-Chiang; Cheng, Yung-Chen; Wang, Hsiang-Chen; Yang, C.C.; Ma, Kung-Jen; Shen, Cheng-Hsing; Chen, L.C.; Kim, K.H.; Lin, J.Y.; Jiang, H.X. |
| 國立臺灣大學 |
2003-12 |
Dependencies of optical and material properties on nominal indium content and well width in InGaN/GaN quantum well structures
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Tang, Tsung-Yi; Teng, Chih-Chung; Lin, Shih-Chun; Lin, En-Chiang; Chen, Meng-Ku; Wu, Cheng-Ming; Chen, Jiun-Yang; Cheng, Yung-Chen; Feng, Shih-Wei; Yang, C.C. |
| 國立臺灣大學 |
2003-12 |
Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures
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Wang, Hsiang-Chen; Tsai, Cheng-Yeh; Cheng, Yung-Chen; Lin, En-Chiang; Feng, Shih-Wei; Yang, C.C.; Ma, Kung-Jen; Kuo, Cheng-Ta; Tsang, Jian-Shihn |
| 國立臺灣大學 |
2003-12 |
Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping
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Cheng, Yung-Chen; Lin, En-Chiang; Feng, Shih-Wei; Wang, Hsiang-Chen; Yang, C.C.; Ma, Kung-Jen; Shi, Shih-Chen; Chen, L.C.; Pan, Chang-Chi; Chyi, Jen-Inn |
| 國立臺灣大學 |
2003-09 |
Indium aggregated quantum dot structures in InGaN compounds
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Yang, C.C.; Feng, Shih-Wei; Cheng, Yung-Chen; Chung, Yi-Yin; Lin, En-Chiang; Wang, Hsiang-Chen; Tang, Tsung-Yi; Deng, Chih-Chung; Lin, Si-Jiung; Ma, Kung-Jen; Lin, Yen-Sheng |
| 國立臺灣大學 |
2003 |
A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths
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Lu, Yen-Cheng; Ma, Kung-Jeng; Chung, Yi-Yin; Feng, Shih-Wei; Cheng, Yung-Chen; Lin, En-Chiang; Yang, C. C.; Kuo, Cheng-Ta; Tsang, Jian-Shihn |
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