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Institution Date Title Author
國立交通大學 2017-04-21T06:49:29Z Stacked Low-Voltage PMOS for High-Voltage ESD Protection with Latchup-Free Immunity Tang, Kai-Neng; Liao, Seian-Feng; Ker, Ming-Dou; Chiou, Hwa-Chyi; Huang, Yeh-Jen; Tsai, Chun-Chien; Jou, Yeh-Ning; Lin, Geeng-Lih
國立交通大學 2017-04-21T06:49:12Z ESD Protection Design with Latchup-Free Immunity in 120V SOI Process Huang, Yi-Jie; Ker, Ming-Dou; Huang, Yeh-Jen; Tsai, Chun-Chien; Jou, Yeh-Ning; Lin, Geeng-Lih
國立交通大學 2017-04-21T06:49:05Z Impact of Guard Ring Layout on the Stacked Low-Voltage PMOS for High-Voltage ESD Protection Liao, Seian-Feng; Tang, Kai-Neng; Ker, Ming-Dou; Yeh, Jia-Rong; Chiou, Hwa-Chyi; Huang, Yeh-Jen; Tsai, Chun-Chien; Jou, Yeh-Ning; Lin, Geeng-Lih
國立交通大學 2014-12-08T15:47:28Z Measurement on Snapback Holding Voltage of High-Voltage LDMOS for Latch-up Consideration Chen, Wen-Yi; Ker, Ming-Dou; Huang, Yeh-Jen; Jou, Yeh-Ning; Lin, Geeng-Lih
國立交通大學 2014-12-08T15:25:06Z Experimental evaluation and device simulation of device structure influences on latchup immunity in high-voltage 40-V CMOS process Hsu, Sheng-Fu; Ker, Ming-Dou; Lin, Geeng-Lih; Jou, Yeh-Ning
國立交通大學 2014-12-08T15:23:36Z Improvement on ESD Robustness of Lateral DMOS in High-Voltage CMOS ICs by Body Current Injection Chen, Wen-Yi; Ker, Ming-Dou; Jou, Yeh-Ning; Huang, Yeh-Jen; Lin, Geeng-Lih
國立交通大學 2014-12-08T15:07:38Z The impact of high-voltage drift n-well and shallow trench isolation layouts on electrical characteristics of LDMOSFETs Huang, C. T.; Tsui, Bing-Yue; Liu, Hsu-Ju; Lin, Geeng-Lih
義守大學 2009 Improvement on ESD robustness of lateral DMOS in high-voltage CMOS ICs by body current injection Chen, Wen-Yi ; Ker, Ming-Dou ; Jou, Yeh-Ning ; Huang, Yeh-Jen ; Lin, Geeng-Lih

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