|
"lin hc"的相关文件
显示项目 101-125 / 650 (共26页)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:45:05Z |
Plasma-induced charging damage in ultrathin (3-nm) gate oxides
|
Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:58Z |
Fused-ring and linking group effects of proton donors and accepters on simple H-bonded liquid crystals
|
Lin, HC; Shiaws, JM; Wu, CY; Tsai, CT |
| 國立交通大學 |
2014-12-08T15:44:57Z |
Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
|
Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:24Z |
H-bonded effects on supramolecular liquid crystalline trimers containing photoluminescent cores
|
Lin, HC; Sheu, HY; Chang, CL; Tsai, CT |
| 國立交通大學 |
2014-12-08T15:44:20Z |
A novel thin-film transistor with self-aligned field induced drain
|
Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
|
Lin, HC; Yeh, KL; Huang, RG; Lin, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:44Z |
Synthesis of novel acetal thia-cage compounds
|
Wu, CY; Lin, HC; Wang, ZY; Wu, HJ |
| 國立交通大學 |
2014-12-08T15:43:41Z |
Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide
|
Tsai, MY; Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors
|
Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:51Z |
Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate
|
Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Ambipolar Schottky-barrier TFTs
|
Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
|
Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain
|
Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:25Z |
Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
|
Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:42:20Z |
Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
|
Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-N-channel metal-oxide-semiconductor field-effect transistors
|
Chen, SJ; Chung, SSS; Lin, HC |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Self-aligned fabrication of thin-film transistors with field-induced drain
|
Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:57Z |
Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
|
Hung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Breakdown modes and their evolution in ultrathin gate oxide
|
Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
|
Lin, HC; Wang, MF; Lu, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:20Z |
High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
|
Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:10Z |
Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel
|
Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
|
Perng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
|
Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
|
Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T |
显示项目 101-125 / 650 (共26页)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
每页显示[10|25|50]项目
|
