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Institution	Date	Title	Author
國立臺灣大學	2008	Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect	Su, V.C.; Lin, I.S.; Kuo, J.B.; Lin, G.S.; Chen, D.; Yeh, C.S.; Tsai, C.T.; Ma, M.

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