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"lin jian yang"的相关文件
显示项目 11-18 / 18 (共1页)
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| 國立交通大學 |
2014-12-08T15:10:28Z |
Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:19Z |
Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:10:01Z |
Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立交通大學 |
2014-12-08T15:08:02Z |
Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory
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Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:07:23Z |
Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
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Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang |
| 國立成功大學 |
2013-07-22 |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
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Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 東方設計學院 |
2011-05 |
The ferroelectric characteristics of Ba(ZraiTia9)Thin films under post-annealing treatment for applications in nonvolatile memory devices
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Chen, Kai-Huang; Tsai, Jen-Hwan; Wu, Chia-Lin; Lin, Jian-Yang; Cheng, Chien-Min; (東方設計學院電子與資訊系) |
| 東方設計學院 |
2011-05 |
Improvement on oxygen vacancies effect of high dielectric constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films using by plasma treatment
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Chen, Kai-Huang; Wu, Chia-Lin; Lin, Jian-Yang; Cheng, Chien-Min; (東方設計學院電子與資訊系) |
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