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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2014-12-08T15:10:28Z Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang
國立交通大學 2014-12-08T15:10:19Z Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang
國立交通大學 2014-12-08T15:10:01Z Improved reliability of Mo nanocrystal memory with ammonia plasma treatment Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang
國立交通大學 2014-12-08T15:08:02Z Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi(2) Nanocrystals Nonvolatile Memory Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:07:23Z Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride Lin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang
國立成功大學 2013-07-22 Enhancement of the stability of resistive switching characteristics by conduction path reconstruction Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn
東方設計學院 2011-05 The ferroelectric characteristics of Ba(ZraiTia9)Thin films under post-annealing treatment for applications in nonvolatile memory devices Chen, Kai-Huang; Tsai, Jen-Hwan; Wu, Chia-Lin; Lin, Jian-Yang; Cheng, Chien-Min; (東方設計學院電子與資訊系)
東方設計學院 2011-05 Improvement on oxygen vacancies effect of high dielectric constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films using by plasma treatment Chen, Kai-Huang; Wu, Chia-Lin; Lin, Jian-Yang; Cheng, Chien-Min; (東方設計學院電子與資訊系)

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