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Institution Date Title Author
國立交通大學 2019-04-02T05:59:53Z Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory Hou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen
國立交通大學 2019-04-02T05:58:49Z Electrode dependence of filament formation in HfO2 resistive-switching memory Lin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen
國立交通大學 2014-12-08T15:29:52Z Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode Lin, Kuan-Liang; Hou, Tuo-Hung; Lee, Yao-Jen; Chang, Jhe-Wei; Lin, Jun-Hung; Shieh, Jiann; Chou, Cheng-Tung; Lei, Tan-Fu; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi
國立交通大學 2014-12-08T15:11:55Z Evolution of RESET current and filament morphology in low-power HfO(2) unipolar resistive switching memory Hou, Tuo-Hung; Lin, Kuan-Liang; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen
國立交通大學 2014-12-08T15:11:44Z Electrode dependence of filament formation in HfO(2) resistive-switching memory Lin, Kuan-Liang; Hou, Tuo-Hung; Shieh, Jiann; Lin, Jun-Hung; Chou, Cheng-Tung; Lee, Yao-Jen

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