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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立成功大學 |
2014-03 |
ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node
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Chen, Ying-Tsung; Lin, Chien-Ting; Chiang, Wen-Tai; Lin, Mon-Sen; Yang, Chih-Wei; Ke, Jian-Cun; Chang, Shoou-Jinn |
| 國立成功大學 |
2013-03 |
Effects of postdeposition annealing on a high-k-last/gate-last integration scheme for 20 nm nMOS and pMOS
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Chen, Ying-Tsung; Fu, Ssu-I; Lin, Chien-Ting; Chiang, Wen-Tai; Chang, Shoou-Jinn; Lin, Mon-Sen; Jenq, Jyh-Shyang |
| 國立成功大學 |
2012-01 |
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric
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Hu, Chih-Chun; Lin, Mon-Sen; Wu, Tsu-Yi; Adriyanto, Feri; Sze, Po-Wen; Wu, Chang-Luen; Wang, Yeong-Her |
| 國立成功大學 |
2010-07-20 |
以液相沉積法沉積鋇摻雜二氧化鈦薄膜並應用於氮化鋁鎵/氮化鎵金氧半結構高電子遷移率電晶體
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林茂森; Lin, Mon-Sen |
| 國立成功大學 |
2010-07-20 |
以液相沉積法沉積鋇摻雜二氧化鈦薄膜並應用於氮化鋁鎵/氮化鎵金氧半結構高電子遷移率電晶體
|
林茂森; Lin, Mon-Sen |
Showing items 1-5 of 5 (1 Page(s) Totally)
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