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Showing items 1-24 of 24 (1 Page(s) Totally)
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| 國立成功大學 |
2015-05 |
Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model
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Yao, En-Ping; Shiu, Shiun-Ming; Tsai, Yi-Jhe; Lin, Yu-Shyan; Hsu, Wei-Chou |
| 國立成功大學 |
2015-01 |
Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO2 and TiO2 passivation
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Lin, Yu-Shyan; Lin, Shin-Fu; Hsu, Wei-Chou |
| 國立成功大學 |
2013-02-01 |
Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain
|
Chan, Ching-Hsiang; Ho, Ching-Hwa; Chen, Ming-Kai; Lin, Yu-Shyan; Huang, Ying-Sheng; Hsu, Wei-Chou |
| 國立成功大學 |
2007-10 |
Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Jun-Chin |
| 國立成功大學 |
2007-07 |
A metamorphic heterostructure field-effect transistor with a double delta-doped channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Yeh, Jung-Han; Huang, Jun-Chin |
| 國立成功大學 |
2007-06 |
An improved symmetrically-graded doped-channel heterostructure field-effect transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
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Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua |
| 國立成功大學 |
2006-06 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai |
| 國立成功大學 |
2006-04 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa |
| 國立成功大學 |
2006-03 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B. |
| 國立成功大學 |
2006-03 |
Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT
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Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
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Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2004-06 |
Characteristics of spike-free single and double heterostructure-emitter bipolar transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Jong, Fuh-Cheng; Chiou, Yu-Zung; Chen, Yeong-Jia; Tang, Jing-Jou |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
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Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2004-05 |
Characteristics of In0.52Al0.48As/InxGa1-xAsyP1-y/ In0.52Al0.48As high electron-mobility transistors
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Chen, Yen-Wei; Hsu, W. C.; Chen, Y. J.; Hsu, R. T.; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2003-11 |
Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
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Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan |
| 國立成功大學 |
2002-02-01 |
Characteristics of delta-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 schottky layer
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Hsu, Wei-Chou; Lee, Ching-Sung; Lin, Yu-Shyan |
| 國立成功大學 |
2002-02 |
High breakdown characteristic 6-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT
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Chen, Yen-Wei; Hsu, Wei-Chou; Shieh, Her-Ming; Chen, Yeong-Jia; Lin, Yu-Shyan; Li, Yih-Juan; Wang, Tzong-Bin |
| 國立成功大學 |
2001-01-15 |
An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled delta-doping InP channel
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Chen, Yeong-Jia; Chen, Yen-Wei; Lin, Yu-Shyan; Yeh, Chia-Yen; Li, Yih-Juan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-07 |
Investigation of a graded channel InGaAs/GaAs heterostructure transistor
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Li, Yih-Juan; Su, Jan-Shing; Lin, Yu-Shyan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-05-22 |
In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Yeh, Chia-Yen; Shieh, Her-Ming |
Showing items 1-24 of 24 (1 Page(s) Totally)
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