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Showing items 31-39 of 39 (2 Page(s) Totally)
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| 國立彰化師範大學 |
2005 |
Starined InGaAlAs/AlGaAs active Layers for 850-nm VCSELs
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Chen, Jun-Rong; Lee, Chung-Hsien; Chiu, Chien-Fang; Kuo, Yen-Kuang; Liou, Bo-Ting |
| 國立彰化師範大學 |
2005 |
Effect of Hole Blocking Layer on the Characteristics of Organic Light-emitting Diodes
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Chang, Yung-Cheng; Yang, Cheng-Hong; Horng, Li-De; Kuo, Yen-Kuang; Chang, Shu-Hsuan; Liou, Bo-Ting |
| 國立彰化師範大學 |
2004-09 |
Effect of Band-offset Ratio on Characteristics of 405-nm InGaN Quantum-well Lasers
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Liou, Bo-Ting; Kuo, Yen-Kuang; Yen, Sheng-Horng; Lin, Cheng-Yang |
| 國立彰化師範大學 |
2004-07 |
Vegard's Law Deviation in Lattice Constant and Band Gap Bowing Parameter of Zincblende InxGa1−xN
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Kuo, Yen-Kuang; Liou, Bo-Ting; Yen, Sheng-Horng; Chu, Han-Yi |
| 國立彰化師範大學 |
2004-02 |
Effect of Band-offset Ratio on Analysis of Violet-blue InGaN Laser Characteristics
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Kuo, Yen-Kuang; Liou, Bo-Ting; Chen, Mei-Ling; Yen, Sheng-Horng; Lin, Cheng-Yang |
| 國立彰化師範大學 |
2004-01 |
Band-Gap Bowing Parameters of the Zincblende Ternary III–Nitrides Derived from Theoretical Simulation
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Lin, Wen-Wei; Kuo, Yen-Kuang; Liou, Bo-Ting |
| 國立彰化師範大學 |
2004 |
Effect of Band-offset Ratio on Carrier Distribution and Optical Properties of Blue InGaN Quantum-well Lasers
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Chen, Hsiu-Fen; Hsieh, Shang-Wei; Liou, Bo-Ting; Kuo, Yen-Kuang |
| 國立彰化師範大學 |
2004 |
Effect of Band-offset Ratio on Analysis of 405-nm InGaN Laser Characteristics
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Lin, Cheng-Yang; Yen, Sheng-Horng; Liou, Bo-Ting; Kuo, Yen-Kuang |
| 國立彰化師範大學 |
2003 |
Vegard’s Law Deviation in Band Gaps and Bowing Parameters of the III-nitride Ternary Compound Semiconductors
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Liou, Bo-Ting; Yen, Sheng-Horng; Kuo, Yen-Kuang |
Showing items 31-39 of 39 (2 Page(s) Totally)
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