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机构 日期 题名 作者
國立交通大學 2014-12-08T15:05:34Z REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:27Z INFLUENCE OF INDIUM DOPING ON ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:27Z BEHAVIOR OF THE 1ST LAYER GROWTH IN GAAS MOLECULAR-BEAM EPITAXY LIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC
國立交通大學 2014-12-08T15:05:26Z DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY LIU, DG; LEE, CP; CHANG, KH; WU, JS; LIOU, DC
國立交通大學 2014-12-08T15:05:25Z RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:21Z IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:20Z CHARACTERIZATION OF IMPROVED ALGAAS/GAAS RESONANT TUNNELING HETEROSTRUCTURE BIPOLAR-TRANSISTORS WU, JS; CHANG, CY; LEE, CP; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:19Z INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:12Z QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:05:06Z PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAAS CHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA
國立交通大學 2014-12-08T15:05:00Z A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATION LIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK
國立交通大學 2014-12-08T15:04:59Z HIGH-QUALITY ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES CHANG, KH; WU, JS; LIU, DG; LIOU, DC; LEE, CP
國立交通大學 2014-12-08T15:04:54Z DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY LIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ
國立交通大學 2014-12-08T15:04:54Z INTRINSIC AND EXTRINSIC EFFECTS ON PERFORMANCE LIMITATION OF ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC
國立交通大學 2014-12-08T15:04:39Z TRANSMISSION ELECTRON-MICROSCOPY STUDY OF HEAVILY DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY LIU, DG; FAN, JC; LEE, CP; CHANG, KH; LIOU, DC
國立交通大學 2014-12-08T15:04:31Z FUNDAMENTAL MODE-OPERATION OF HIGH-POWER INGAAS/GAAS/ALGAAS LASER ARRAYS TSANG, JS; LIOU, DC; TSAI, KL; CHEN, HR; TSAI, CM; LEE, CP; JUANG, FY

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