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Institution Date Title Author
國立交通大學 2014-12-08T15:03:44Z CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE LIOU, TS; WANG, TH; CHANG, CY
國立交通大學 2014-12-08T15:03:19Z CALCULATION OF THE STRUCTURAL DEPENDENCE OF INFRARED-ABSORPTION IN P-TYPE STRAINED-LAYER SIGE/SI QUANTUM-WELLS LIOU, TS; WANG, TH; CHANG, CY
國立交通大學 2014-12-08T15:03:13Z ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC
國立交通大學 2014-12-08T15:02:57Z Analysis of high-field hole transport characteristics in Si1-xGex alloys with a bond orbital band structure Liou, TS; Wang, TH; Chang, CY
國立交通大學 2014-12-08T15:01:15Z Conditional expectation for evaluation of risk groundwater flow and solute transport: one-dimensional analysis Liou, TS; Yeh, HD

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