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| 國立成功大學 |
2012-10 |
Comparison of Equivalent Oxide Thickness and Electrical Properties of Atomic Layer Deposited Hafnium Zirconate Dielectrics with Thermal or Decoupled Plasma Nitridation Process
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Chiang, Chen-Kuo; Wu, Chien-Hung; Liu, Chin-Chien; Lin, Jin-Fu; Yang, Chien-Lun; Wu, Jiun-Yuan; Wang, Shui-Jinn |
| 國立成功大學 |
2012-01 |
Characterization of Hf1-xZrxO2 Gate Dielectrics with 0 <= x <= 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications
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Chiang, Chen-Kuo; Wu, Chien-Hung; Liu, Chin-Chien; Lin, Jin-Fu; Yang, Chien-Lun; Wu, Jiun-Yuan; Wang, Shui-Jinn |
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