|
"liu p w"的相关文件
显示项目 1-10 / 24 (共3页)
1 2 3 > >>
每页显示[10|25|50]项目
| 臺大學術典藏 |
2020-04-28T07:14:49Z |
Reliable and high performance transparent electrowetting displays
|
Chang, R.-L.J.; Liu, P.-W.; Wu, C.-Y.; Cheng, P.-P.; Chen, J.-L.; Chen, K.-C.; Hsieh, W.-L.; KUO-CHING CHEN |
| 臺大學術典藏 |
2018-09-10T08:45:03Z |
Cascade quantum dots sensitized TiO2 nanorod arrays for solar cell applications
|
Chen, L.-Y.; Yang, Z.; Chen, C.-Y.; Ho, T.-Y.; Liu, P.-W.; Chang, H.-T.; HUAN-TSUNG CHANG |
| 臺大學術典藏 |
2018-09-10T06:01:57Z |
Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
|
Hsu, H. P.; Sitarek, P.; Huang, Y. S.; Liu, P.W.; Lin, J.M.; Lin, H. H.; Tiong, K.K.; HAO-HSIUNG LIN |
| 國立交通大學 |
2014-12-08T15:48:21Z |
New Observation of an Abnormal Leakage Current in Advanced CMOS Devices with Short Channel Lengths Down to 50nm and Beyond
|
Hsieh, E. R.; Chung, Steve S.; Lin, Y. H.; Tsai, C. H.; Liu, P. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:45:53Z |
More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable Reliability
|
Chung, Steve S.; Hsieh, E. R.; Huang, D. C.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:39:25Z |
The Understanding of Strain-Induced Device Degradation in Advanced MOSFETs with Process-Induced Strain Technology of 65nm Node and Beyond
|
Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:24:57Z |
New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond
|
Chung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:22:00Z |
A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurement
|
Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:21:56Z |
Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)
|
Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:21:21Z |
A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic Regime
|
Hsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H. |
显示项目 1-10 / 24 (共3页)
1 2 3 > >>
每页显示[10|25|50]项目
|
