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"liu po tsun"的相关文件
显示项目 21-30 / 283 (共29页)
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| 國立交通大學 |
2019-04-02T06:00:56Z |
Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
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Tsai, Chih-Tsung; Chang, Ting-Chang; Liu, Po-Tsun; Cheng, Yi-Li; Kin, Kon-Tsu; Huang, Fon-Shan |
| 國立交通大學 |
2019-04-02T06:00:27Z |
The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure
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Ruan, Dun-Bao; Liu, Po-Tsun; Gan, Kai-Jhih; Chiu, Yu-Chuan; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T06:00:08Z |
A promising sputtering route for dense Cu2ZnSnS4 absorber films and their photovoltaic performance
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Jheng, Bao-Tang; Liu, Po-Tsun; Wu, Meng-Chyi |
| 國立交通大學 |
2019-04-02T06:00:00Z |
TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology
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Gan, Kai-Jhih; Liu, Po-Tsun; Chiu, Yu-Chuan; Ruan, Dun-Bao; Chien, Ta-Chun; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:59Z |
Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Yu, Min-Chin; Gan, Kai-Jhih; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:59:28Z |
Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kuo, Po-Yi; Yu, Min-Chin; Kan, Kai-Zhi; Chien, Ta-Chun; Chen, Yi-Heng; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:57Z |
Effect of high-pressure H2O treatment on elimination of interfacial GeOX layer between ZrO2 and Ge stack
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Huang, Chen-Shuo; Liu, Po-Tsun |
| 國立交通大學 |
2019-04-02T05:58:52Z |
Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors
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Ruan, Dun-Boo; Liu, Po-Tsun; Chen, Yi-Heng; Chiu, Yu-Chuan; Chien, To-Chun; Yu, Min-Chin; Gan, Kai-Jhih; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:50Z |
Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition
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Ruan, Dun-Bao; Liu, Po-Tsun; Chiu, Yu-Chuan; Kan, Kai-Zhi; Yu, Min-Chin; Chien, Ta-Chun; Chen, Yi-Heng; Kuo, Po-Yi; Sze, Simon M. |
| 國立交通大學 |
2019-04-02T05:58:16Z |
Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
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Wang, M. C.; Tsao, S. W.; Chang, T. C.; Lin, Y. P.; Liu, Po-Tsun; Chen, J. R. |
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