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Showing items 36-60 of 86  (4 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:40:42Z Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003) Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY
國立交通大學 2014-12-08T15:40:35Z A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT
國立交通大學 2014-12-08T15:40:06Z Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM
國立交通大學 2014-12-08T15:39:55Z Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT
國立交通大學 2014-12-08T15:39:54Z A method for fabricating a superior oxide/nitride/oxide gate stack Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM
國立交通大學 2014-12-08T15:39:53Z Quasi-superlattice storage - A concept of multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:39:46Z A novel approach of fabricating germanium nanocrystals for nonvolatile memory application Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM
國立交通大學 2014-12-08T15:39:46Z A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:39:45Z Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping Liu, PT; Chen, CW; Chang, TC; Tseng, TY
國立交通大學 2014-12-08T15:39:45Z Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM
國立交通大學 2014-12-08T15:39:45Z CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY
國立交通大學 2014-12-08T15:39:43Z Investigation of the electrical properties and reliability of amorphous SiCN Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY
國立交通大學 2014-12-08T15:39:42Z CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T
國立交通大學 2014-12-08T15:39:27Z Memory effect of oxide/SiC : O/oxide sandwiched structures Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:39:21Z A distributed charge storage with GeO2 nanodots Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:39:16Z Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY
國立交通大學 2014-12-08T15:39:12Z Leakage behavior of the quasi-superlattice stack for multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:39:11Z High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH
國立交通大學 2014-12-08T15:38:58Z Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004) Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:38:48Z Quasisuperlattice storage: A concept of multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:37:17Z Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004) Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM
國立交通大學 2014-12-08T15:37:10Z Study on etching profile of nanoporous silica Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Cu-penetration induced breakdown mechanism for a-SiCN Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:09Z Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS

Showing items 36-60 of 86  (4 Page(s) Totally)
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