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机构 日期 题名 作者
國立交通大學 2014-12-08T15:43:16Z The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM
國立交通大學 2014-12-08T15:43:16Z Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ
國立交通大學 2014-12-08T15:43:11Z Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ) Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM
國立交通大學 2014-12-08T15:42:46Z Effective strategy for porous organosilicate to suppress oxygen ashing damage Liu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM
國立交通大學 2014-12-08T15:42:32Z Preventing dielectric damage of low-k organic siloxane by passivation treatment Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM
國立交通大學 2014-12-08T15:42:17Z Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Peng, DZ; Chang, TC; Zan, HW; Huang, TY; Chang, CY; Liu, PT
國立交通大學 2014-12-08T15:42:15Z Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment Chang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM
國立交通大學 2014-12-08T15:42:14Z Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM
國立交通大學 2014-12-08T15:42:13Z Characterization of porous silicate for ultra-low k dielectric application Liu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM
國立交通大學 2014-12-08T15:42:08Z Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM
國立交通大學 2014-12-08T15:41:56Z A W-spacer GOLD TFT with high performance and high reliability Zan, HW; Peng, DZ; Shih, PS; Chang, TC; Liu, PT; Chang, CY
國立交通大學 2014-12-08T15:41:53Z Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM
國立交通大學 2014-12-08T15:41:39Z Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY
國立交通大學 2014-12-08T15:41:39Z The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY
國立交通大學 2014-12-08T15:41:38Z Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT
國立交通大學 2014-12-08T15:41:21Z Electrical transport phenomena in aromatic hydrocarbon polymer Liu, PT; Chang, TC; Yan, ST; Li, CH; Sze, SM
國立交通大學 2014-12-08T15:41:18Z Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors Peng, DZ; Chang, TC; Chang, CY; Tsai, ML; Tu, CH; Liu, PT
國立交通大學 2014-12-08T15:41:14Z A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage Peng, DZ; Chang, TC; Liu, CF; Yeh, PH; Liu, PT; Chang, CY
國立交通大學 2014-12-08T15:41:07Z Moisture-induced material instability of porous organosilicate glass Chang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM
國立交通大學 2014-12-08T15:40:54Z Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY
國立交通大學 2014-12-08T15:40:42Z Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003) Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY
國立交通大學 2014-12-08T15:40:35Z A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT
國立交通大學 2014-12-08T15:40:06Z Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM
國立交通大學 2014-12-08T15:39:55Z Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT
國立交通大學 2014-12-08T15:39:54Z A method for fabricating a superior oxide/nitride/oxide gate stack Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM
國立交通大學 2014-12-08T15:39:53Z Quasi-superlattice storage - A concept of multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:39:46Z A novel approach of fabricating germanium nanocrystals for nonvolatile memory application Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM
國立交通大學 2014-12-08T15:39:46Z A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:39:45Z Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping Liu, PT; Chen, CW; Chang, TC; Tseng, TY
國立交通大學 2014-12-08T15:39:45Z Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM
國立交通大學 2014-12-08T15:39:45Z CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY
國立交通大學 2014-12-08T15:39:43Z Investigation of the electrical properties and reliability of amorphous SiCN Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY
國立交通大學 2014-12-08T15:39:42Z CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T
國立交通大學 2014-12-08T15:39:27Z Memory effect of oxide/SiC : O/oxide sandwiched structures Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:39:21Z A distributed charge storage with GeO2 nanodots Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:39:16Z Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY
國立交通大學 2014-12-08T15:39:12Z Leakage behavior of the quasi-superlattice stack for multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:39:11Z High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH
國立交通大學 2014-12-08T15:38:58Z Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004) Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:38:48Z Quasisuperlattice storage: A concept of multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:37:17Z Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004) Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM
國立交通大學 2014-12-08T15:37:10Z Study on etching profile of nanoporous silica Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Cu-penetration induced breakdown mechanism for a-SiCN Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:09Z Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS
國立交通大學 2014-12-08T15:37:06Z Effects of oxygen plasma ashing on barrier dielectric SiCN film Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY
國立交通大學 2014-12-08T15:37:03Z Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization Wu, YC; Chang, TC; Chou, CW; Liu, PT; Tu, CH; Huang, WJ; Lou, JC; Chang, CY
國立交通大學 2014-12-08T15:37:01Z Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM
國立交通大學 2014-12-08T15:36:06Z Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology Chang, TC; Liu, PT; Yan, ST; Sze, SM
國立交通大學 2014-12-08T15:36:06Z Electrical degradation of N-channel poly-Si TFT under AC stress Chen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY

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