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"liu pt"的相关文件
显示项目 26-75 / 86 (共2页)
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| 國立交通大學 |
2014-12-08T15:41:56Z |
A W-spacer GOLD TFT with high performance and high reliability
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Zan, HW; Peng, DZ; Shih, PS; Chang, TC; Liu, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:53Z |
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
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Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
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Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
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Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:21Z |
Electrical transport phenomena in aromatic hydrocarbon polymer
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Liu, PT; Chang, TC; Yan, ST; Li, CH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:18Z |
Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors
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Peng, DZ; Chang, TC; Chang, CY; Tsai, ML; Tu, CH; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:14Z |
A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
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Peng, DZ; Chang, TC; Liu, CF; Yeh, PH; Liu, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Moisture-induced material instability of porous organosilicate glass
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Chang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:40:06Z |
Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
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Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:54Z |
A method for fabricating a superior oxide/nitride/oxide gate stack
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Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:53Z |
Quasi-superlattice storage - A concept of multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel approach of fabricating germanium nanocrystals for nonvolatile memory application
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide
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Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping
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Liu, PT; Chen, CW; Chang, TC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Investigation of the electrical properties and reliability of amorphous SiCN
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:42Z |
CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures
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Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:21Z |
A distributed charge storage with GeO2 nanodots
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Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
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Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:12Z |
Leakage behavior of the quasi-superlattice stack for multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:11Z |
High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
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Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH |
| 國立交通大學 |
2014-12-08T15:38:58Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
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Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:48Z |
Quasisuperlattice storage: A concept of multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
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Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on etching profile of nanoporous silica
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Cu-penetration induced breakdown mechanism for a-SiCN
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Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Effects of oxygen plasma ashing on barrier dielectric SiCN film
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:03Z |
Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
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Wu, YC; Chang, TC; Chou, CW; Liu, PT; Tu, CH; Huang, WJ; Lou, JC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
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Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology
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Chang, TC; Liu, PT; Yan, ST; Sze, SM |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electrical degradation of N-channel poly-Si TFT under AC stress
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Chen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:36:05Z |
Enhanced performance of poly-Si thin film transistors using fluorine ions implantation
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Tu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Yang, CY; Wu, YC; Liu, HC; Chen, WR; Chang, CY |
| 國立交通大學 |
2014-12-08T15:36:04Z |
Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers
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Tu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Feng, LW; Wu, YC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:04Z |
High-performance integration of copper interconnects with low-k hydrogen silsesquioxane employing deuterium plasma treatment
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Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Lee, JK; Shih, FY; Tsai, E; Chen, G; Sze, SM |
| 國立交通大學 |
2014-12-08T15:25:43Z |
High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels
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Wu, YC; Chang, CY; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:19:10Z |
Leakage conduction behavior in electron-beam-cured nanoporous silicate films
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Liu, PT; Tsai, TM; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:50Z |
Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
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Yeh, PH; Wu, HH; Yu, CH; Chen, LJ; Liu, PT; Hsu, CH; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:43Z |
Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric
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Yang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC |
| 國立交通大學 |
2014-12-08T15:18:31Z |
Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
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Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate
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Chen, SC; Lou, JC; Chien, CH; Liu, PT; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:20Z |
High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
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Chen, CW; Chang, TC; Liu, PT; Lu, HY; Wang, KC; Huang, CS; Ling, CC; Tseng, TY |
显示项目 26-75 / 86 (共2页)
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