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机构 日期 题名 作者
國立交通大學 2014-12-08T15:39:16Z Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY
國立交通大學 2014-12-08T15:39:12Z Leakage behavior of the quasi-superlattice stack for multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:39:11Z High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH
國立交通大學 2014-12-08T15:38:58Z Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004) Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM
國立交通大學 2014-12-08T15:38:48Z Quasisuperlattice storage: A concept of multilevel charge storage Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM
國立交通大學 2014-12-08T15:37:17Z Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004) Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM
國立交通大學 2014-12-08T15:37:10Z Study on etching profile of nanoporous silica Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY
國立交通大學 2014-12-08T15:37:10Z Cu-penetration induced breakdown mechanism for a-SiCN Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY
國立交通大學 2014-12-08T15:37:09Z Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS

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