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"liu pt"的相關文件
顯示項目 56-80 / 86 (共4頁)
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| 國立交通大學 |
2014-12-08T15:37:17Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
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Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on etching profile of nanoporous silica
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Cu-penetration induced breakdown mechanism for a-SiCN
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Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
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Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Effects of oxygen plasma ashing on barrier dielectric SiCN film
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Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:03Z |
Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallization
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Wu, YC; Chang, TC; Chou, CW; Liu, PT; Tu, CH; Huang, WJ; Lou, JC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:37:01Z |
Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
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Chang, TC; Liu, PT; Yan, ST; Yang, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-voltage nonvolatile memory technology
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Chang, TC; Liu, PT; Yan, ST; Sze, SM |
| 國立交通大學 |
2014-12-08T15:36:06Z |
Electrical degradation of N-channel poly-Si TFT under AC stress
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Chen, CW; Chang, TC; Liu, PT; Lu, HY; Tsai, TM; Weng, CF; Hu, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:36:05Z |
Enhanced performance of poly-Si thin film transistors using fluorine ions implantation
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Tu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Yang, CY; Wu, YC; Liu, HC; Chen, WR; Chang, CY |
| 國立交通大學 |
2014-12-08T15:36:04Z |
Improvement of reliability for polycrystalline thin-film transistors using self-aligned fluorinated silica glass spacers
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Tu, CH; Chang, TC; Liu, PT; Zan, HW; Tai, YH; Feng, LW; Wu, YC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:04Z |
High-performance integration of copper interconnects with low-k hydrogen silsesquioxane employing deuterium plasma treatment
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Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Lee, JK; Shih, FY; Tsai, E; Chen, G; Sze, SM |
| 國立交通大學 |
2014-12-08T15:25:43Z |
High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels
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Wu, YC; Chang, CY; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:19:10Z |
Leakage conduction behavior in electron-beam-cured nanoporous silicate films
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Liu, PT; Tsai, TM; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:50Z |
Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
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Yeh, PH; Wu, HH; Yu, CH; Chen, LJ; Liu, PT; Hsu, CH; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:43Z |
Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric
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Yang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC |
| 國立交通大學 |
2014-12-08T15:18:31Z |
Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
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Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate
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Chen, SC; Lou, JC; Chien, CH; Liu, PT; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:20Z |
High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
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Chen, CW; Chang, TC; Liu, PT; Lu, HY; Wang, KC; Huang, CS; Ling, CC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:18:14Z |
Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
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Wu, YC; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
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Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Lou, JC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:17:44Z |
Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol
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Liu, PT; Tsai, CT; Chang, TC; Kin, KT; Chang, PL; Chen, CM; Cheng, HF |
| 國立交通大學 |
2014-12-08T15:17:35Z |
Temperature effects of n-MOSFET devices with uniaxial mechanical strains
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Tsai, MN; Chang, TC; Liu, PT; Cheng, O; Huang, CT |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
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Cheng, YL; Wang, YL; Hwang, GJ; O'Neill, ML; Karwacki, EJ; Liu, PT; Chen, CF |
顯示項目 56-80 / 86 (共4頁)
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