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Showing items 11-60 of 86 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:44:50Z |
Effects of NH3-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects
|
Liu, PT; Chang, TC; Yang, YL; Cheng, YF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:44:42Z |
Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric
|
Liu, PT; Chang, TC; Huang, MC; Yang, YL; Mor, YS; Tsai, MS; Chung, H; Hou, J; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:55Z |
Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
|
Chang, TC; Liu, PT; Tsai, TM; Yeh, FS; Tseng, TY; Tsai, MS; Chen, BC; Yang, YL; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:42Z |
Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane
|
Liu, PT; Chang, TC; Huang, MC; Tsai, MS; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:43:16Z |
Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Sze, SM; Mei, YJ |
| 國立交通大學 |
2014-12-08T15:43:11Z |
Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:46Z |
Effective strategy for porous organosilicate to suppress oxygen ashing damage
|
Liu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:32Z |
Preventing dielectric damage of low-k organic siloxane by passivation treatment
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
|
Peng, DZ; Chang, TC; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment
|
Chang, TC; Liu, PT; Mor, YS; Tsai, TM; Chen, CW; Mei, YJ; Pan, FM; Wu, WF; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatment
|
Mor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:13Z |
Characterization of porous silicate for ultra-low k dielectric application
|
Liu, PT; Chang, TC; Hsu, KC; Tseng, TY; Chen, LM; Wang, CJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:08Z |
Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:56Z |
A W-spacer GOLD TFT with high performance and high reliability
|
Zan, HW; Peng, DZ; Shih, PS; Chang, TC; Liu, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:53Z |
Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
|
Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Chu, CJ; Pan, FM; Lur, W; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
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Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
|
Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Mei, YJ; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
|
Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:21Z |
Electrical transport phenomena in aromatic hydrocarbon polymer
|
Liu, PT; Chang, TC; Yan, ST; Li, CH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:41:18Z |
Characteristics and stress-induced degradation of laser-activated low temperature polycrystalline silicon thin-film transistors
|
Peng, DZ; Chang, TC; Chang, CY; Tsai, ML; Tu, CH; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:14Z |
A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
|
Peng, DZ; Chang, TC; Liu, CF; Yeh, PH; Liu, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:07Z |
Moisture-induced material instability of porous organosilicate glass
|
Chang, TC; Chen, CW; Liu, PT; Mor, YS; Tsai, HM; Tsai, TM; Yan, ST; Tu, CH; Tseng, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology
|
Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY |
| 國立交通大學 |
2014-12-08T15:40:42Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)
|
Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
|
Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:40:06Z |
Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
|
Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
|
Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:54Z |
A method for fabricating a superior oxide/nitride/oxide gate stack
|
Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:53Z |
Quasi-superlattice storage - A concept of multilevel charge storage
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel approach of fabricating germanium nanocrystals for nonvolatile memory application
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide
|
Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping
|
Liu, PT; Chen, CW; Chang, TC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications
|
Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:43Z |
Investigation of the electrical properties and reliability of amorphous SiCN
|
Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Huang, HC; Chen, JM; Tseng, CH; Liu, CC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:42Z |
CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
|
Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T |
| 國立交通大學 |
2014-12-08T15:39:27Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures
|
Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:21Z |
A distributed charge storage with GeO2 nanodots
|
Chang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:16Z |
Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application
|
Chang, TC; Tsai, TM; Liu, PT; Yan, ST; Chang, YC; Aoki, H; Sze, SM; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:12Z |
Leakage behavior of the quasi-superlattice stack for multilevel charge storage
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:11Z |
High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
|
Wu, YC; Chang, TC; Chang, CY; Chen, CS; Tu, CH; Liu, PT; Zan, HW; Tai, YH |
| 國立交通大學 |
2014-12-08T15:38:58Z |
Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
|
Chang, TC; Yan, ST; Yang, FM; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:38:48Z |
Quasisuperlattice storage: A concept of multilevel charge storage
|
Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (Vol 447, pg 516, 2004)
|
Chang, TC; Yan, ST; Liu, PT; Lin, ZW; Aoki, H; Sze, SM |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on etching profile of nanoporous silica
|
Chen, CW; Chang, TC; Liu, PT; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Study on the effect of electron beam curing on low-K porous organosilicate glass (OSG) material
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Chang, TC; Tsai, TM; Liu, PT; Chen, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:10Z |
Cu-penetration induced breakdown mechanism for a-SiCN
|
Chen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition
|
Cheng, YL; Wang, Y; Lan, JK; Chen, HC; Lin, JH; Wu, Y; Liu, PT; Feng, MS |
Showing items 11-60 of 86 (2 Page(s) Totally)
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