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Showing items 36-45 of 86 (9 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:42Z |
Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)
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Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:40:06Z |
Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications
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Liu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:54Z |
A method for fabricating a superior oxide/nitride/oxide gate stack
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Chang, TC; Yan, ST; Liu, PT; Wang, MC; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:53Z |
Quasi-superlattice storage - A concept of multilevel charge storage
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, HH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel approach of fabricating germanium nanocrystals for nonvolatile memory application
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Lin, SH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:46Z |
A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide
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Chang, TC; Yan, ST; Chen, YT; Liu, PT; Sze, SM |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Pattern profile distortion and stress evolution in nanoporous organosilicates after photoresist stripping
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Liu, PT; Chen, CW; Chang, TC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride
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Chang, TC; Yan, ST; Liu, PT; Chen, CW; Wu, YC; Sze, SM |
Showing items 36-45 of 86 (9 Page(s) Totally)
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