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Showing items 71-86 of 86 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:18:50Z |
Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
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Yeh, PH; Wu, HH; Yu, CH; Chen, LJ; Liu, PT; Hsu, CH; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:43Z |
Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric
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Yang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC |
| 國立交通大學 |
2014-12-08T15:18:31Z |
Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channels
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Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:22Z |
An interfacial investigation of high-dielectric constant material hafnium oxide on Si substrate
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Chen, SC; Lou, JC; Chien, CH; Liu, PT; Chang, TC |
| 國立交通大學 |
2014-12-08T15:18:20Z |
High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
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Chen, CW; Chang, TC; Liu, PT; Lu, HY; Wang, KC; Huang, CS; Ling, CC; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:18:14Z |
Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
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Wu, YC; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:12Z |
Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
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Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Lou, JC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:17:44Z |
Activation of carbon nanotube emitters by using supercritical carbon dioxide fluids with propyl alcohol
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Liu, PT; Tsai, CT; Chang, TC; Kin, KT; Chang, PL; Chen, CM; Cheng, HF |
| 國立交通大學 |
2014-12-08T15:17:35Z |
Temperature effects of n-MOSFET devices with uniaxial mechanical strains
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Tsai, MN; Chang, TC; Liu, PT; Cheng, O; Huang, CT |
| 國立交通大學 |
2014-12-08T15:17:21Z |
Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane
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Cheng, YL; Wang, YL; Hwang, GJ; O'Neill, ML; Karwacki, EJ; Liu, PT; Chen, CF |
| 國立交通大學 |
2014-12-08T15:17:21Z |
A novel method for growing polycrystalline Ge layer by using UHVCVD
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Tu, CH; Chang, TC; Liu, PT; Yang, TH; Zan, HW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:17:12Z |
Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs
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Chang, TS; Chang, TC; Liu, PT; Yeh, FS |
| 國立交通大學 |
2014-12-08T15:17:11Z |
Short-diode like diffusion capacitance of organic light emission devices
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Tsai, MN; Chang, TC; Liu, PT; Ko, CW; Chen, CJ; Lo, KM |
| 國立交通大學 |
2014-12-08T15:17:05Z |
Formation of silicon germanium nitride layer with distributed charge storage elements
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Tu, CH; Chang, TC; Liu, PT; Liu, HC; Chen, WR; Tsai, CC; Chang, LT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:16:58Z |
Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC
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Tu, CH; Chang, TC; Liu, PT; Yang, CY; Liu, HC; Chen, WR; Wu, YC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:16:38Z |
High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
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Wu, YC; Chang, TC; Liu, PT; Chou, CW; Tu, CH; Chang, CY |
Showing items 71-86 of 86 (4 Page(s) Totally)
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