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Showing items 1-18 of 18 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-03T06:44:27Z |
Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs
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Liu, Shih-Chien; Huang, Chung-Kai; Chang, Chia-Hua; Lin, Yueh-Chin; Chen, Bo-Yuan; Tsai, Szu-Ping; Majlis, Burhanuddin Yeop; Dee, Chang-Fu; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
|
Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:09Z |
Reliability improvement in GaN HEMT power device using a field plate approach
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Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2018-08-21T05:53:49Z |
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
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Wu, Chia-Hsun; Han, Ping-Cheng; Liu, Shih-Chien; Hsieh, Ting-En; Lumbantoruan, Franky Juanda; Ho, Yu-Hsuan; Chen, Jian-You; Yang, Kun-Sheng; Wang, Huan-Chung; Lin, Yen-Ku; Chang, Po-Chun; Luc, Quang Ho; Lin, Yueh-Chin; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:14Z |
AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
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Wang, Huan-Chung; Hsieh, Ting-En; Lin, Yueh-Chin; Luc, Quang Ho; Liu, Shih-Chien; Wu, Chia-Hsun; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi |
| 國立交通大學 |
2018-06-21 |
Halbleitervorrichtung und Verfahren zur Herstellung derselben
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Hsieh, Ting-En; Lin, Yueh-Chin; Han, Ping-Cheng; Wu, Chia-Hsun; Huang, Chung-Kai; Liu, Shih-Chien; Chang, Edward Yi; HSIEH TING-EN; LIN YUEH-CHIN; HAN PING-CHENG; WU CHIA-HSUN; HUANG CHUNG-KAI; LIU SHIH-CHIEN; CHANG EDWARD YI |
| 國立交通大學 |
2018-01-24T07:39:23Z |
氮化鎵高功率元件性能增強技術
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劉世謙; 張翼; Liu, Shih-Chien; Chang, Yi |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
|
Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
|
Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:48Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
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Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:20Z |
Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
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Chang, Po-Chun; Luc, Quang-Ho; Lin, Yueh-Chin; Liu, Shih-Chien; Lin, Yen-Ku; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:26Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
|
Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:29:41Z |
Performance Improvements of AlGaN/GaN HEMTs by Strain Modification and Unintentional Carbon Incorporation
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Tien-Tung Luong; Binh Tinh Tran; Ho, Yen-Teng; Minh-Thien-Huu Ha; Hsiao, Yu-Lin; Liu, Shih-Chien; Chiu, Yu-Sheng; Chang, Edward-Yi |
| 國立交通大學 |
2014-12-16T06:14:57Z |
HIGH ELECTRON MOBILITY GaN-BASED TRANSISTOR STRUCTURE
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CHANG EDWARD YI; CHANG CHIA-HUA; LIN YUEH-CHIN; CHEN YU KONG; LIU SHIH-CHIEN |
| 國立交通大學 |
2014-12-16T06:14:02Z |
Method for forming T-shaped gate structure
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Chang Edward Yi; Huang Lu-Che; Chang Chia-Hua; Lin Yueh-Chin; Chieng Wei-Hua; Liu Shih-Chien |
| 國立交通大學 |
2014-12-08T15:36:57Z |
GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications
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Liu, Shih-Chien; Chen, Bo-Yuan; Lin, Yueh-Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
|
Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
Showing items 1-18 of 18 (1 Page(s) Totally)
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