|
Taiwan Academic Institutional Repository >
Browse by Author
|
"liu wen chau"
Showing items 151-200 of 266 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
|
Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
|
Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
國立成功大學 |
2006-05-11 |
Three-terminal-controlled resistor-type hydrogen sensor
|
Hung, C. W.; Lin, H. L.; Tsai, Y. Y.; Lai, P. H.; Fu, Ssu-I; Chen, H. I.; Liu, Wen-Chau |
國立成功大學 |
2006-05 |
Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes
|
Lee, Chong-Yi; Yen, Chih-Hung; Su, Juh-Yuh; Lin, Hsen-Wen; Liu, Wen-Chau |
國立成功大學 |
2006-05 |
Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
|
Fu, Ssu-I; Cheng, Shiou-Ying; Liu, Wen-Chau |
國立成功大學 |
2006-04 |
Pd-oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hung, Ching-Wen; Liu, Rong-Chau; Liu, Wen-Chau |
國立成功大學 |
2006-03 |
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
|
Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuei-Yi; Lai, Po-Hsien; Chen, Li-Yang; Liu, Wen-Chau; Chiang, Meng-Hsueh |
國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
|
Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
|
Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
國立成功大學 |
2006-02 |
AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition
|
Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
國立成功大學 |
2006-01-17 |
Characteristics of a Pd-oxide-In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hong, Ching-Wen; Liu, Wen-Chau |
國立成功大學 |
2006-01 |
Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
|
Lai, Po-Hsien; Chen, Chun-Wei; Kao, Chung-I; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
國立成功大學 |
2006 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor
|
Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
國立成功大學 |
2006 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode
|
Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chen, Huey-Ing; Liu, Wen-Chau |
國立成功大學 |
2005-09 |
Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
|
Cheng, Chin-Chuan; Liu, Wen-Chau; Lin, Han-Lien; Hong, Ching-Wen; Hsu, Wei-Hsi; Chen, Huey-Ing; Lin, Kun-Wei; Tsai, Yan-Ying |
國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
國立成功大學 |
2005-03-15 |
Hydrogen sensing properties of a Pt-oxide-Al0.24Ga0.76As high-electron-mobility transistor
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
國立成功大學 |
2005-03 |
Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers
|
Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Liu, Wen-Chau; Chang, Wen-Lung; Chiang, Meng-Hsueh |
國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
|
Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
國立成功大學 |
2005-02 |
A new Pd-InP Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles
|
Chou, Yen-I; Chen, Chia-Ming; Liu, Wen-Chau; Chen, Huey-Ing |
國立成功大學 |
2004-12-09 |
Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor
|
Cheng, C. C.; Tsai, Y. Y.; Lin, K. W.; Chen, H. I.; Hsu, W. H.; Hong, C. W.; Liu, Wen-Chau |
國立成功大學 |
2004-12 |
Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs
|
Chen, Chun-Yuan; Fu, Ssu-I; Cheng, Shiou-Ying; Chang, Chi-Yuan; Tsai, Chien-Hung; Yen, Chih-Hung; Tsai, Sheng-Fu; Liu, Rong-Chau; Liu, Wen-Chau |
國立成功大學 |
2004-11 |
Characteristics of an InP-InGaAs-InGaAsPHBT
|
Chen, Jing-Yuh; Cheng, Shiou-Ying; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Fu, Ssu-Yi; Tsai, Sheng-Fu; Liu, Wen-Chau |
國立成功大學 |
2004-11 |
Temperature-dependent dc characteristics of an InGaAs/InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure
|
Chen, Jing-Yuh; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Tsai, Sheng-Fu; Cheng, Shiou-Ying; Liu, Wen-Chau |
國立成功大學 |
2004-07 |
Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
|
Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Fu, Ssu-I; Liu, Wen-Chau |
國立成功大學 |
2004-07 |
Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure
|
Lai, Po-Hsien; Chuang, Hung-Ming; Tsai, Sheng-Fu; Kao, Chung-I; Chen, Horng-Rung; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2004-07 |
Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs
|
Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Chuang, Hung-Ming; Yen, Chih-Hung; Liu, Wen-Chau |
國立成功大學 |
2004-06 |
Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-His; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2004-05-01 |
Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode
|
Cheng, Chin-Chuan; Tsai, Yan-Yi; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Liu, Wen-Chau |
國立成功大學 |
2004-05 |
New InP-InGaAsHBT with a superlattice-collector structure
|
Chen, Jing-Yuh; Guo, Der-Feng; Cheng, Shiou-Ying; Lee, Kuan-Ming; Chen, Chun-Yuan; Chuang, Hung-Ming; Fu, Ssu-Yi; Liu, Wen-Chau |
國立成功大學 |
2004-04 |
A double-barrier-emitter triangular-baffier optoelectronic switch
|
Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2004-04 |
Characteristics of a new BBOS with an AlGaAs-delta(n(+))-GaAs-InAlGaP collector structure
|
Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2004-03-10 |
Semiconductor diode capable of detecting hydrogen at high temperatures
|
Liu, Wen-Chau; Chen, Huey-Ing; Lin, Kun-Wei; Lu, Chun-Tsen |
國立成功大學 |
2004-03 |
Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with doping concentrations of AlxGa1-xAs graded layers
|
Cheng, Shiou-Ying; Chen, Jing-Yuh; Chen, Chun-Yuan; Chuan, Hung-Ming; Yen, Chih-Hung; Lee, Kuan-Ming; Liu, Wen-Chau |
國立成功大學 |
2004-03 |
Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
|
Chuang, Hung-Ming; Cheng, Shiou-Ying; Chen, Chun-Yuan; Liao, Xin-Da; Lai, Po-Hsien; Kao, Chung-I; Liu, Wen-Chau |
國立成功大學 |
2004-02 |
Characteristics of Pd/InGaP Schottky diodes hydrogen sensors
|
Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Lu, Chun-Tsen; Cheng, Chin-Chuan; Liu, Wen-Chau |
國立成功大學 |
2004-01 |
Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
|
Chuang, Hung-Ming; Cheng, Shiou-Ying; Lai, Po-Hsien; Liao, Xin-Da; Chen, Chun-Yuan; Yen, Chih-Hung; Liu, Rong-Chau; Liu, Wen-Chau |
國立成功大學 |
2003-12 |
Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes
|
Tsai, Yan-Ying; Lin, Kun-Wei; Lu, Chun-Tsen; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Cheng, Chin-Chuan; Liu, Wen-Chau |
國立成功大學 |
2003-11 |
Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
|
Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2003-09-01 |
Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode
|
Lin, Kun-Wei; Chen, Huey-Ing; Cheng, Chin-Chuan; Chuang, Hung-Ming; Lu, Chun-Tsen; Liu, Wen-Chau |
國立成功大學 |
2003-08 |
Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)
|
Chuang, Hung-Ming; Cheng, Shiou-Ying; Chen, Chun-Yuan; Liao, Xin-Da; Liu, Rong-Chau; Liu, Wen-Chau |
國立成功大學 |
2003-07-28 |
Anomalous temperature-dependent characteristics of silicon diffused resistors
|
Chuang, Hung-Ming; Tsai, Sheng-Fu; Thei, K. B.; Liu, Wen-Chau |
國立成功大學 |
2003-07 |
A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor
|
Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Tsai, Yan-Ying; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2003-06-26 |
InGaP/InGaAs double delta-doped channel transistor
|
Chuang, Hung-Ming; Cheng, S .Y.; Liao, X. D.; Chen, C. Y.; Liu, Wen-Chau |
國立成功大學 |
2003-06 |
A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor
|
Lu, Chun-Tsen; Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
國立成功大學 |
2003-05 |
Temperature-dependent characteristics of polysilicon and diffused resistors
|
Chuang, Hung-Ming; Thei, K. B.; Tsai, Sheng-Fu; Liu, Wen-Chau |
國立成功大學 |
2003-04-29 |
A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications
|
Thei, Kong-Beng; Cheng, Chung-Long; Lin, Hsin-Chien; Chang, Tong-Sen; Tsai, Nun-Sian; Lee, Kuo-Hwa; Chuang, Hung-Ming; Tsai, Sheng-Fu; Liu, Wen-Chau |
國立成功大學 |
2003-04 |
A comprehensive study of polysilicon resistors for CMOS ULSI applications
|
Chuang, Hung-Ming; Thei, Kong-Beng; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Chen, Hon-Rung; Liu, Wen-Chau |
國立成功大學 |
2003-04 |
Dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
|
Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Rong-Chau; Yen, Chih-Hung; Chen, Jing-Yuh; Cheng, Chin-Chuan;; Liu, Wen-Chau |
Showing items 151-200 of 266 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
|