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Taiwan Academic Institutional Repository >
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"liu wen chau"
Showing items 156-180 of 266 (11 Page(s) Totally)
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| 國立成功大學 |
2006-04 |
Pd-oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hung, Ching-Wen; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
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Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuei-Yi; Lai, Po-Hsien; Chen, Li-Yang; Liu, Wen-Chau; Chiang, Meng-Hsueh |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
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Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
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Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-02 |
AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-01-17 |
Characteristics of a Pd-oxide-In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hong, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-01 |
Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
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Lai, Po-Hsien; Chen, Chun-Wei; Kao, Chung-I; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-09 |
Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
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Cheng, Chin-Chuan; Liu, Wen-Chau; Lin, Han-Lien; Hong, Ching-Wen; Hsu, Wei-Hsi; Chen, Huey-Ing; Lin, Kun-Wei; Tsai, Yan-Ying |
| 國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-03-15 |
Hydrogen sensing properties of a Pt-oxide-Al0.24Ga0.76As high-electron-mobility transistor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-03 |
Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Liu, Wen-Chau; Chang, Wen-Lung; Chiang, Meng-Hsueh |
| 國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-02 |
A new Pd-InP Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles
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Chou, Yen-I; Chen, Chia-Ming; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2004-12-09 |
Temperature-dependent hydrogen sensing characteristics of a Pd/oxide/Al0.24Ga0.76As high electron mobility transistor
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Cheng, C. C.; Tsai, Y. Y.; Lin, K. W.; Chen, H. I.; Hsu, W. H.; Hong, C. W.; Liu, Wen-Chau |
| 國立成功大學 |
2004-12 |
Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs
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Chen, Chun-Yuan; Fu, Ssu-I; Cheng, Shiou-Ying; Chang, Chi-Yuan; Tsai, Chien-Hung; Yen, Chih-Hung; Tsai, Sheng-Fu; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2004-11 |
Characteristics of an InP-InGaAs-InGaAsPHBT
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Chen, Jing-Yuh; Cheng, Shiou-Ying; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Fu, Ssu-Yi; Tsai, Sheng-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2004-11 |
Temperature-dependent dc characteristics of an InGaAs/InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure
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Chen, Jing-Yuh; Chen, Chun-Yuan; Lee, Kuan-Ming; Yen, Chih-Hung; Tsai, Sheng-Fu; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure
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Lai, Po-Hsien; Chuang, Hung-Ming; Tsai, Sheng-Fu; Kao, Chung-I; Chen, Horng-Rung; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Chuang, Hung-Ming; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2004-06 |
Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-His; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-05-01 |
Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode
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Cheng, Chin-Chuan; Tsai, Yan-Yi; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Liu, Wen-Chau |
Showing items 156-180 of 266 (11 Page(s) Totally)
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