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"liu wen chau"的相关文件
显示项目 211-260 / 271 (共6页) << < 1 2 3 4 5 6 > >> 每页显示[10|25|50]项目
| 國立成功大學 |
2002-10 |
Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
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Yu, Kuo-Hui; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-10 |
Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications
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Chuang, Hung-Ming; Thei, Kong-Beng; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-09 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
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Chen, Chun-Yuan; Wang, Wei-Chou; Chiou, Wen-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2002-06 |
Effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications
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Thei, Kong-Beng; Chuang, Hung-Ming; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-05 |
Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors
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Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Wang, Ckih-Kai; Liu, Wen-Chau |
| 國立成功大學 |
2002-03 |
On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure
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Thei, Kong-Beng; Chuang, Hung-Ming; Yu, Kuo-Hui; Liu, Wen-Chau; Liu, Rong-Chau; Lin, Kun-Wei; Su, Chi-Wen; Ho, Chin-Shiung; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2002-01-17 |
Highly hydrogen-sensitive Pd/InP metaloxide-semiconductor Schottky diode hydrogen sensor
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Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Thei, Kong-Beng; Liu, Wen-Chau; Chen, Huey-Ing |
| 國立成功大學 |
2002-01 |
Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures
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Chiou, Wen-Huei; Pan, Hsi-Jen; Liu, Rong-Chau; Chen, Chun-Yuan; Wang, Chih-Kai; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2001-12 |
Investigation of temperature-dependent characteristics of an n(+)-InGaAs/n-GaAs composite doped channel HFET
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Thei, Kong-Beng |
| 國立成功大學 |
2001-12 |
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
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Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Yu, Kuo-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Wang, Chih-Kai; Chiou, Wen-Huei; Liu, Wen-Chau |
| 國立成功大學 |
2001-11 |
Comparative hydrogen-sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Wang, Chik-Kai |
| 國立成功大學 |
2001-09 |
Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor
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Liu, Wen-Chau; Pan, Hsi-Jen; Chen, Huey-Ing; Lin, Kun-Wei; Cheng, Shiou-Ying; Yu, Kuo-Hui |
| 國立成功大學 |
2001-08-13 |
Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications
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Liu, Wen-Chau; Yu, Kuo-Hui; Liu, Rong-Chau; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Yen, Chih-Hung; Lin, Kuan-Po; Wu, Cheng-Zu; Chiou, Wen-Hui; Chen, Chin-Ying |
| 國立成功大學 |
2001-08 |
High-performance In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)
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Liu, Wen-Chau; Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Wang, C. K.; Chang, Hong-Ming |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behavior
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Liu, Wen-Chau; Wang, Wei-Chou; Yen, Chih-Hung; Cheng, Chin-Chuan; Wu, Cheng-Zu; Chiou, Wen-Hui; Chuen, C. Y. |
| 國立成功大學 |
2001-08 |
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Wu, Cheng-Zu; Lin, Kuan-Po; Yen, Chih-Hung |
| 國立成功大學 |
2001-08 |
A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications
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Thei, Kong-Beng; Liu, Wen-Chau; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Chin-Hsiung; Su, Chi-Wen; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2001-07 |
Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/InxGa1-xAs/GaAs pseudomorphic high electron mobility transistor
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-07 |
Characterization of polysilicon resistors in sub-0.25 mu m CMOS ULSI applications
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Liu, Wen-Chau; Thei, Kong-Beng; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Yen-Shih; Su, Chi-Wen; Wong, Shyh-Chyi; Lin, Chih-Hsien; Diaz, C. H. |
| 國立成功大學 |
2001-06 |
On the multiple negative-differential-resistance (MNDR) InGaP/GaAs resonant tunneling bipolar transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Feng, Shun-Ching; Lin, Kun-Wei; Yu, Kuo-Hui; Laih, Lih-Wen |
| 國立成功大學 |
2001-05 |
Characteristics of delta-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)
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Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Pan1, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-05 |
Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
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Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-03 |
Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor
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Pan, Hsi-Jen; Feng, Shun-Ching; Wang, Wei-Chou; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Laih, Lih-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2001-02 |
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic
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Lin, Kun-Wei; Yu, Kuo-Hui; Chang, Wen-Lung; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2001-02 |
Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)
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Wang, Wei-Chou; Pan, Hsi-Jen; Lin, Kun-Wei; Yu, Kuo-Hui; Wu, Cheng-Zu; Liu, Wen-Chau; Laih, Lin-Wen; Cheng, Shiou-Ying |
| 國立成功大學 |
2001-02 |
Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures
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Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2001-01 |
Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chang, Wen-Lung; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-12 |
Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors
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Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Chin-Chuan; Yu, Kuo-Hui; Lin, Kun-Wei; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
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Yen, Chih-Hung; Lin, Kuan-Po; Yu, Kuo-Hui; Chang, Wen-Lung; Lin, Kun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor
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Yu, Kuo-Hui; Chang, Wen-Lung; Feng, Shun-Ching; Liu, Wen-Chau |
| 國立成功大學 |
2000-11 |
Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor
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Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-10-26 |
InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications
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Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2000-09 |
Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor
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Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-08 |
Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications
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Liu, Wen-Chau; Wang, Wei-Chou; Pan, Hsi-Jen; Chen, Jing-Yuh; Cheng, Shiou-Ying; Lin, Kun-Wei; Yu, Kuo-Hui; Thei, Kong-Beng; Cheng, Chin-Chuan |
| 國立成功大學 |
2000-07 |
A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices
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Liu, Wen-Chau; Thei, Kong-Beng; Wang, Wei-Chou; Pan, Hsi-Jen; Wuu, Shou-Gwo; Lei, Ming-Ta; Wang, Chung-Shu; Cheng, Shiou-Ying |
| 國立成功大學 |
2000-06 |
Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure
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Lin, Kuan-Po; Yen, Chih-Hung; Chang, Wen-Lung; Yu, Kuo-Hui; Lin, Kun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2000-04 |
A new wide voltage operation regime double heterojunction bipolar transistor
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Cheng, Shiou-Ying; Pan, Hsi-Jen; Feng, Shun-Ching; Yub, Kuo-Hui; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2000-03 |
Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
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Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-07-26 |
Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Cheng, Shiou-Ying; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-07-05 |
Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
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Cheng, Shiou-Ying; Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-06 |
New self-aligned T-gate InGaP GaAs field-effect transistors grown by LP-MOCVD
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Lour, W. S.; Chang, Wen-Lung; Shih, Y. M.; Liu, Wen-Chau |
| 國立成功大學 |
1999-05-21 |
A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3)
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Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
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Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1999-04-05 |
Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
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Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung |
显示项目 211-260 / 271 (共6页) << < 1 2 3 4 5 6 > >> 每页显示[10|25|50]项目
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