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机构 日期 题名 作者
國立成功大學 2001-02 Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures Wang, Wei-Chou; Pan, Hsi-Jen; Yu, Kuo-Hui; Lin, Kun-Wei; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2001-01 Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chang, Wen-Lung; Tsai, Jung-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2000-12 Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Chin-Chuan; Yu, Kuo-Hui; Lin, Kun-Wei; Wu, Cheng-Zu; Liu, Wen-Chau
國立成功大學 2000-11 Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors Yen, Chih-Hung; Lin, Kuan-Po; Yu, Kuo-Hui; Chang, Wen-Lung; Lin, Kun-Wei; Liu, Wen-Chau
國立成功大學 2000-11 Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor Yu, Kuo-Hui; Chang, Wen-Lung; Feng, Shun-Ching; Liu, Wen-Chau
國立成功大學 2000-11 Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor Liu, Wen-Chau; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan
國立成功大學 2000-10-26 InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lin, Kuan-Po; Yen, Chih-Hung; Wu, Cheng-Zu; Liu, Wen-Chau
國立成功大學 2000-09 Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor Wang, Wei-Chou; Pan, Hsi-Jen; Thei, Kong-Beng; Lin, Kun-Wei; Yu, Kuo-Hui; Cheng, Chin-Chuan; Laih, Lih-Wen; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2000-08 Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications Liu, Wen-Chau; Wang, Wei-Chou; Pan, Hsi-Jen; Chen, Jing-Yuh; Cheng, Shiou-Ying; Lin, Kun-Wei; Yu, Kuo-Hui; Thei, Kong-Beng; Cheng, Chin-Chuan
國立成功大學 2000-07 A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices Liu, Wen-Chau; Thei, Kong-Beng; Wang, Wei-Chou; Pan, Hsi-Jen; Wuu, Shou-Gwo; Lei, Ming-Ta; Wang, Chung-Shu; Cheng, Shiou-Ying
國立成功大學 2000-06 Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure Lin, Kuan-Po; Yen, Chih-Hung; Chang, Wen-Lung; Yu, Kuo-Hui; Lin, Kun-Wei; Liu, Wen-Chau
國立成功大學 2000-04 A new wide voltage operation regime double heterojunction bipolar transistor Cheng, Shiou-Ying; Pan, Hsi-Jen; Feng, Shun-Ching; Yub, Kuo-Hui; Tsai, Jung-Hui; Liu, Wen-Chau
國立成功大學 2000-03 Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau
國立成功大學 2000-01 High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau
國立成功大學 1999-12-01 Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau
國立成功大學 1999-07-26 Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors Liu, Wen-Chau; Pan, Hsi-Jen; Cheng, Shiou-Ying; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui
國立成功大學 1999-07-05 Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor Cheng, Shiou-Ying; Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui
國立成功大學 1999-06 Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen
國立成功大學 1999-06 New self-aligned T-gate InGaP GaAs field-effect transistors grown by LP-MOCVD Lour, W. S.; Chang, Wen-Lung; Shih, Y. M.; Liu, Wen-Chau
國立成功大學 1999-05-21 A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3) Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau
國立成功大學 1999-04-12 Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou
國立成功大學 1999-04-05 Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung
國立成功大學 1999-04 On the n(+)-GaAs/delta(p(+))-GaInP/n-GaAs high breakdown voltage field-effect transistor Chang, Wen-Lung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Pan, Hsi-Jen; Lour, Wen-Shiung; Liu, Wen-Chau
國立成功大學 1999-04 Investigation of an InGaP GaAs resonant-tunneling transistor (RTT) Cheng, Shiou-Ying; Tsai, Jung-Hui; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau
國立成功大學 1998-07-01 Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs) Liu, Wen-Chau; Tsai, Jung-Hui; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin

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