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"liu wen chau"的相关文件
显示项目 251-260 / 271 (共28页)
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| 國立成功大學 |
2000-03 |
Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor
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Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen; Feng, Shun-Ching; Yu, Kuo-Hui; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2000-01 |
High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In P-0.49 pseudomorphic heterostructure transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-12-01 |
Temperature-dependent characteristics of the inverted delta-doped V-shaped InGaP/InxGa1-xAs/GaAs pseudomorphic transistors
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Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Thei, Kong-Beng; Cheng, Shiou-Ying; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
1999-07-26 |
Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors
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Liu, Wen-Chau; Pan, Hsi-Jen; Cheng, Shiou-Ying; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-07-05 |
Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor
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Cheng, Shiou-Ying; Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Wang, Wei-Chou; Chen, Jing-Yuh; Feng, Shun-Ching; Yu, Kuo-Hui |
| 國立成功大學 |
1999-06 |
Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49/In0.15Ga0.85As pseudomorphic HEMT
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Liu, Wen-Chau; Chang, Wen-Lung; Lour, Wen-Shiung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Chen, Jing-Yuh; Wang, Wei-Chou; Pan, Hsi-Jen |
| 國立成功大學 |
1999-06 |
New self-aligned T-gate InGaP GaAs field-effect transistors grown by LP-MOCVD
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Lour, W. S.; Chang, Wen-Lung; Shih, Y. M.; Liu, Wen-Chau |
| 國立成功大學 |
1999-05-21 |
A new InGaP GaAs double delta-doped heterojunction bipolar transistor ((DHBT)-H-3)
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Cheng, Shiou-Ying; Wang, Wei-Chou; Chang, Wen-Lung; Chen, Jing-Yuh; Pan, His-Jen; Liu, Wen-Chau |
| 國立成功大學 |
1999-04-12 |
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85 As pseudomorphic transistors
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Lour, Wen-Shiung; Chang, Wen-Lung; Liu, Wen-Chau; Shie, Yung-Hsin; Pan, Hsi-Jen; Chen, Jing-Yuh; Wang, Wei-Chou |
| 國立成功大學 |
1999-04-05 |
Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors
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Liu, Wen-Chau; Chang, Wen-Lung; Pan, Hsi-Jen; Yu, Kuo-Hui; Feng, Shung-Ching; Lour, Wen-Shiung |
显示项目 251-260 / 271 (共28页)
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