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机构 日期 题名 作者
國立成功大學 1999-04 On the n(+)-GaAs/delta(p(+))-GaInP/n-GaAs high breakdown voltage field-effect transistor Chang, Wen-Lung; Cheng, Shiou-Ying; Shie, Yung-Hsin; Pan, Hsi-Jen; Lour, Wen-Shiung; Liu, Wen-Chau
國立成功大學 1999-04 Investigation of an InGaP GaAs resonant-tunneling transistor (RTT) Cheng, Shiou-Ying; Tsai, Jung-Hui; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau
國立成功大學 1998-07-01 Investigation of GaAs-based heterostructure-emitter bipolar transistors (HEBTs) Liu, Wen-Chau; Tsai, Jung-Hui; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin
國立成功大學 1998-06 Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor Wang, Wei-Chou; Cheng, Shiou-Ying; Chang, Wen-Lung; Pan, Hsi-Jen; Shie, Yung-Hsin; Liu, Wen-Chau
國立成功大學 1998-04-16 Improved breakdown in LP-MOCVD grown n(+)-GaAs/delta(P+)-GaInP/n-GaAs heterojunction camel-gate FET Lour, W. S.; Chang, W. L.; Young, S. T.; Liu, Wen-Chau
國立成功大學 1998-03 Comparison of surface recombination effect in GaAs-based heterostructure-emitter and heterostructure-base transistors (HEHBTs) Liu, Rong-Chau; Liu, Wen-Chau
國立成功大學 1998-03 Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs) Liu, Rong-Chau; Liu, Wen-Chau
國立成功大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung
國立臺灣大學 1998 An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung
國立成功大學 1997-10 Investigation of step-doped channel heterostructure field-effect transistor Laih, L. W.; Tsai, J. H.; Wu, C. Z.; Cheng, S. Y.; Liu, Wen-Chau
國立臺灣大學 1996 On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs) Tsai, Jung-Hui; Laih, Lih-Wen; Shih, Hui-Jung; Liu, Wen-Chau; Lin, Hao-Hsiung

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