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"liu wen chau"的相关文件
显示项目 66-90 / 266 (共11页)
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| 國立成功大學 |
2010-02 |
Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure
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Liu, Yi-Jung; Yen, Chih-Hung; Yu, Kuo-Hui; Lin, Pei-Ling; Chen, Li-Yang; Tsai, Tsung-Han; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2010 |
On an AlGaInP Multiple Quantum Well Light Emitting Diode with a Thin Carbon-Doped GaP Contact Layer Structure
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Tsai, Tsung-Yuan; Liu, Yi-Jung; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2010 |
Performance of a GaAs-Based Pseudomorphic Transistor with the Electroless-Plated Surface Treated Gate
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Chen, Li-Yang; Chen, Huey-Ing; Cheng, Shiou-Ying; Tsai, Tsung-Han; Liu, Yi-Jung; Huang, Chien-Chang; Chen, Tai-You; Hsu, Chi-Hsiang; Liu, Wen-Chau |
| 國立成功大學 |
2009-11 |
On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure
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Liu, Yi-Jung; Yen, Chih-Hung; Chen, Li-Yang; Tsai, Tsung-Han; Tsai, Tsung-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2009-11 |
Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes
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Liu, Yi-Jung; Yen, Chih-Hung; Hsu, Chia-Hao; Yu, Kuo-Hui; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-10 |
Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments
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Chen, Tzu-Pin; Lee, Chi-Jhung; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Yi-Jhung; Huang, Chien-Chang; Chen, Tai-You; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2009-08-03 |
Characteristics of an electroless plated-gate transistor
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Chen, Li-Yang; Chen, Huey-Ing; Huang, Chien-Chang; Huang, Yi-Wen; Tsai, Tsung-Han; Liu, Yi-Chun; Chen, Tai-You; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2009-08 |
Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach
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Liu, Yi-Jung; Yen, Chih-Hung; Yu, Kuo-Hui; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-06-04 |
On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Kuo, Yaw-Wen; Chiu, Po-Shun; Chang, Chung-Fu; Chen, Li-Yang; Chen, Tzu-Pin; Liu, Yi-Jung; Liu, Wen-Chau |
| 國立成功大學 |
2009-05-21 |
InGaP/GaAs/InGaAs delta-doped p-channel field-effect transistor with p(+)/n(+)/p camel-like gate structure
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Tsai, Jung-Hui; Lour, W. S.; Liu, Wen-Chau |
| 國立成功大學 |
2009-05 |
Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-04 |
On the Pseudomorphic High Electron Mobility Transistors (PHEMTs) With a Low-Temperature Gate Approach
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Chen, Li-Yang; Chen, Huey-Ing; Cheng, Shiou-Ying; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Yi-Jung; Huang, Yi-Wen; Huang, Chien-Chang; Liu, Wen-Chau |
| 國立成功大學 |
2009-04 |
On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Yu, Kuo-Hui; Lin, Pei-Ling; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Huang, Nan-Yi; Lee, Chong-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2009-04 |
On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2009-03-02 |
SiO2 passivation effect on the hydrogen adsorption performance of a Pd/AlGaN-based Schottky diode
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Kuo, Yaw-Wen; Chang, Chung-Fu; Hung, Ching-Wen; Chen, Li-Yang; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2009-02 |
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
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Chen, Tzu-Pin; Lee, Chi-Jhung; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2009-01-05 |
Hydrogen sensing properties of a metamorphic high electron mobility transistor
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Tsai, Tsung-Han; Chen, Huey-Ing; Chang, Chung-Fu; Chiu, Po-Shun; Liu, Yi-Chun; Chen, Li-Yang; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2009-01 |
Microwave complementary doped-channel field-effect transistors
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Liu, Wen-Chau; Li, Chien-Ming; Su, Ning-Xing; Wu, Yi-Zhen; Huang, Yin-Shan |
| 國立成功大學 |
2009-01 |
Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode
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Chang, Chung-Fu; Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Chen, Tzu-Pin; Chen, Li-Yang; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2009 |
Temperature-Dependent Characteristics of a Low Temperature Deposition Approach on a Pseudomorphic High Electron Mobility Transistor
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Chen, Li-Yang; Chen, Huey-Ing; Cheng, Shiou-Ying; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Yi-Jung; Huang, Yi-Wen; Huang, Chien-Chang; Liu, Wen-Chau |
| 國立成功大學 |
2009 |
Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
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Chen, Tzu-Pin; Lee, Chi-Jhung; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Ku, Ghun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau |
| 國立成功大學 |
2008-12 |
Investigation on a Pd-AlGaN/GaN Schottky Diode-Type Hydrogen Sensor With Ultrahigh Sensing Responses
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Tsai, Tsung-Han; Chen, Huey-Ing; Liu, I-Ping; Hung, Ching-Wen; Chen, Tzu-Pin; Chen, Li-Yang; Liu, Yi-Jung; Liu, Wen-Chau |
| 國立成功大學 |
2008-11 |
On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple delta-Doped Sheets
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Chen, Li-Yang; Cheng, Shiou-Ying; Chen, Tzu-Pin; Chu, Kuei-Yi; Tsai, Tsung-Han; Liu, Yi-Chun; Liao, Xin-Da; Liu, Wen-Chau |
| 國立成功大學 |
2008-11 |
A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure
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Yen, Chih-Hung; Liu, Yi-Jung; Huang, Nan-Yi; Yu, Kuo-Hui; Chen, Tzu-Pin; Chen, Li-Yang; Tsai, Tsung-Han; Lee, Chong-Yi; Liu, Wen-Chau |
显示项目 66-90 / 266 (共11页)
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