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"liu wen chau"的相關文件
顯示項目 126-175 / 271 (共6頁)
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| 國立成功大學 |
2007-06-18 |
Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05-21 |
Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N-2 atmospheres
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Improved performance of a dual-passivated heterojunction bipolar transistor
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Cheng, Shiou-Ying; Fu, SSu-I; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals
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Lai, Po-Hsien; Fu, SSu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Huang, Yi-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor
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Hung, Ching-Wen; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, SSu-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-03-08 |
Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2007-02-14 |
Improved characteristics of formal-passivated pseudomorphic high electron mobility transistor
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Lai, P. H.; Fu, S. I; Tsai, Y. Y; Hung, C. W; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-02-01 |
Surface treatment effect on temperature-dependent properties of InGaP/GaAs heterobipolar transistors
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Chen, Tzu-Pin; Fu, Ssu-I; Liu, Wen-Chau; Cheng, Shiou-Ying; Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung |
| 國立成功大學 |
2007-02 |
Characteristics of mesa- and air-type In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs with or without a buried gate
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Hsu, M. K.; Chen, H. R.; Chiu, S. Y.; Chen, W. T.; Liu, Wen-Chau; Tasi, J. H.; Lour, W. S. |
| 國立成功大學 |
2007-01-10 |
Comprehensive study of hydrogen sensing characteristics of Pd metal-oxide-semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers
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Tsai, Yan-Ying; Cheng, Chin-Chuan; Lai, Po-Hsien; Fu, Ssu-I; Hong, Ching-Wen; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-01 |
On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor schottky diode
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Tsai, Yan-Ying; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
On the temperature-dependent electron impact ionizations in a step-graded InAlGaAs/InP collector double heterojunction bipolar transistor
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Chen, Tzu-Pin; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Characteristics improvement for an n-p-n heterostructure optoelectronic switch by introducing a wide-gap layer in the collector
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Temperature effect of a heterojunction bipolar transistor with an emitter-edge-thinning structure
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Chen, Tzu-Pin; Fu, Ssu-I; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance
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Fu, Ssu-I; Chen, Tzu-Pin; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Investigation of amplifying and switching characteristics in double heterostructure-emitter bipolar transistors
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Guo, Der-Feng; Yen, Chih-Hung; Tsai, Jung-Hui; Lour, Wen-Shiung; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Improved hydrogen-sensing properties of a Pt/SiO2/GaN Schottky diode
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Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hung, Chin-Wen; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-12-25 |
Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
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Lai, Po-Hsien; Fu, Ssu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
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Chen, Tzu-Pin; Fu, Ssu-I; Tsai, Jung-Hui; Lour, Wen-Shiung; Guo, Der-Feng; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Further suppression of surface-recombination of an InGaP/GaAs HBT by conformal passivation
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs
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Cheng, Shiou-Ying; Fu, Ssu-I; Chen, Tzu-Pin; Lai, Po-Hsien; Liu, Rong-Chau; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2006-11 |
Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-15 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
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Fu, Ssu-I.; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-12 |
Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-05-11 |
Three-terminal-controlled resistor-type hydrogen sensor
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Hung, C. W.; Lin, H. L.; Tsai, Y. Y.; Lai, P. H.; Fu, Ssu-I; Chen, H. I.; Liu, Wen-Chau |
| 國立成功大學 |
2006-05 |
Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes
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Lee, Chong-Yi; Yen, Chih-Hung; Su, Juh-Yuh; Lin, Hsen-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-05 |
Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
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Fu, Ssu-I; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-04 |
Pd-oxide-Al0.24Ga0.76As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hung, Ching-Wen; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Improved dc and microwave performance of heterojunction bipolar transistors by full sulfur passivation
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Cheng, Shiou-Ying; Fu, Ssu-I; Chu, Kuei-Yi; Lai, Po-Hsien; Chen, Li-Yang; Liu, Wen-Chau; Chiang, Meng-Hsueh |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
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Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
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Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-02 |
AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-01-17 |
Characteristics of a Pd-oxide-In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-Hsi; Hong, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-01 |
Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
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Lai, Po-Hsien; Chen, Chun-Wei; Kao, Chung-I; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
A study of composite-passivation of an InGaP/GaAs heterojunction bipolar transistor
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
On the hydrogen sensing properties of a Pt-oxide-In0.5Al0.5P Schottky diode
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-09 |
Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor
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Cheng, Chin-Chuan; Liu, Wen-Chau; Lin, Han-Lien; Hong, Ching-Wen; Hsu, Wei-Hsi; Chen, Huey-Ing; Lin, Kun-Wei; Tsai, Yan-Ying |
| 國立成功大學 |
2005-08-22 |
Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor
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Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2005-03-15 |
Hydrogen sensing properties of a Pt-oxide-Al0.24Ga0.76As high-electron-mobility transistor
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Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2005-03 |
Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Liu, Wen-Chau; Chang, Wen-Lung; Chiang, Meng-Hsueh |
| 國立成功大學 |
2005-02 |
DC characterization of InP/InGaAs tunneling emitter bipolar transistor
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Cheng, Shiou-Ying; Chen, Chun-Yuan; Fu, Ssu-I; Lai, Po-Hsien; Tsai, Yan-Ying; Liu, Wen-Chau |
顯示項目 126-175 / 271 (共6頁)
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