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"liu wen chau"的相關文件
顯示項目 151-160 / 271 (共28頁)
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| 國立成功大學 |
2006-12 |
A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2006-11 |
Comprehensive study of emitter-ledge thickness of InGaP/GaAs HBTs
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-15 |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
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Fu, Ssu-I.; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-09-12 |
Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Temperature dependences of an In0.46Ga0.54As/In0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
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Chen, Chun-Wei; Lai, Po-Hsien; Lour, Wen-Shiung; Guo, Der-Feng; Tsai, Jung-Hui; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage
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Tsai, Jung-Hui; Chiu, Shao-Yen; Lour, Wen-Shiung; Guo, Der-Feng; Liu, Wen-Chau |
| 國立成功大學 |
2006-08 |
New field-effect resistive Pd/oxide/AlGaAs hydrogen sensor based on pseudomorphic high electron mobility transistor
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Hung, Ching-Wen; Lin, Han-Lien; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-05-11 |
Three-terminal-controlled resistor-type hydrogen sensor
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Hung, C. W.; Lin, H. L.; Tsai, Y. Y.; Lai, P. H.; Fu, Ssu-I; Chen, H. I.; Liu, Wen-Chau |
| 國立成功大學 |
2006-05 |
Enhanced luminescence and reduced junction temperature in n-type modulation-doped AlGaInP multiquantum-well light-emitting diodes
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Lee, Chong-Yi; Yen, Chih-Hung; Su, Juh-Yuh; Lin, Hsen-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-05 |
Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments
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Fu, Ssu-I; Cheng, Shiou-Ying; Liu, Wen-Chau |
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